Patents by Inventor Raymond Mervin Roop

Raymond Mervin Roop has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low temperature plasma Si or SiGe for MEMS applications
    Patent number: 6770569
    Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.
    Type: Grant
    Filed: August 1, 2002
    Date of Patent: August 3, 2004
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Juergen A. Foerstner, Steven M. Smith, Raymond Mervin Roop
  • Low temperature plasma Si or SiGe for MEMS applications
    Publication number: 20040023429
    Abstract: A method is provided for making a MEMS structure (69). In accordance with the method, a CMOS substrate (51) is provided which has interconnect metal (53) deposited thereon. A MEMS structure is created on the substrate through the plasma assisted chemical vapor deposition (PACVD) of a material selected from the group consisting of silicon and silicon-germanium alloys. The low deposition temperatures attendant to the use of PACVD allow these materials to be used for MEMS fabrication at the back end of an integrated CMOS process.
    Type: Application
    Filed: August 1, 2002
    Publication date: February 5, 2004
    Applicant: Motorola Inc.
    Inventors: Juergen A. Foerstner, Steven M. Smith, Raymond Mervin Roop