Abstract: Technologies are described for apparatus, methods and systems effective for filtering. The filters may comprise a first plate. The first plate may include an x-ray absorbing material and walls defining first slits. The first slits may include arc shaped openings through the first plate. The walls of the first plate may be configured to absorb at least some of first x-rays when the first x-rays are incident on the x-ray absorbing material, and to output second x-rays. The filters may comprise a second plate spaced from the first plate. The second plate may include the x-ray absorbing material and walls defining second slits. The second slits may include arc shaped openings through the second plate. The walls of the second plate may be configured to absorb at least some of second x-rays and to output third x-rays.

Abstract: Methods and related equipment for dynamic on-axis in-situ interferometry where the reference surface is positioned in an vacuum chamber. The systems use a wavelength shifting, or a phase shifting interferometer that allows the freedom to eliminate the need to step the cavity length physically with the reference surface, allowing the reference surface to be placed inside the vacuum chamber.

Abstract: Technologies are described for apparatus, methods and systems effective for filtering. The filters may comprise a first plate. The first plate may include an x-ray absorbing material and walls defining first slits. The first slits may include arc shaped openings through the first plate. The walls of the first plate may be configured to absorb at least some of first x-rays when the first x-rays are incident on the x-ray absorbing material, and to output second x-rays. The filters may comprise a second plate spaced from the first plate. The second plate may include the x-ray absorbing material and walls defining second slits. The second slits may include arc shaped openings through the second plate. The walls of the second plate may be configured to absorb at least some of second x-rays and to output third x-rays.

Abstract: Technologies are described for apparatus, methods and systems effective for filtering. The filters may comprise a first plate. The first plate may include an x-ray absorbing material and walls defining first slits. The first slits may include arc shaped openings through the first plate. The walls of the first plate may be configured to absorb at least some of first x-rays when the first x-rays are incident on the x-ray absorbing material, and to output second x-rays. The filters may comprise a second plate spaced from the first plate. The second plate may include the x-ray absorbing material and walls defining second slits. The second slits may include arc shaped openings through the second plate. The walls of the second plate may be configured to absorb at least some of second x-rays and to output third x-rays.

Abstract: Methods and related equipment for dynamic on-axis in-situ interferometry where the reference surface is positioned in an vacuum chamber. The systems use a wavelength shifting, or a phase shifting interferometer that allows the freedom to eliminate the need to step the cavity length physically with the reference surface, allowing the reference surface to be placed inside the vacuum chamber.

Abstract: A dynamic aperture system includes at least one baffle array including a plurality of baffle elements, at least one source configured to provide atoms for differential deposition or ions for differential erosion, and an actuator configured to independently translate each baffle element in order to selectively modify at least one of a shape or size of an aperture formed in the baffle array in real-time.

Abstract: Technologies are described for apparatus, methods and systems effective for filtering. The filters may comprise a first plate. The first plate may include an x-ray absorbing material and walls defining first slits. The first slits may include arc shaped openings through the first plate. The walls of the first plate may be configured to absorb at least some of first x-rays when the first x-rays are incident on the x-ray absorbing material, and to output second x-rays. The filters may comprise a second plate spaced from the first plate. The second plate may include the x-ray absorbing material and walls defining second slits. The second slits may include arc shaped openings through the second plate. The walls of the second plate may be configured to absorb at least some of second x-rays and to output third x-rays.

Abstract: A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF3, Cl2, and O2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Abstract: A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90° as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

Abstract: A multilayer Laue Lens includes a compensation layer formed in between a first multilayer section and a second multilayer section. Each of the first and second multilayer sections includes a plurality of alternating layers made of a pair of different materials. Also, the thickness of layers of the first multilayer section is monotonically increased so that a layer adjacent the substrate has a minimum thickness, and the thickness of layers of the second multilayer section is monotonically decreased so that a layer adjacent the compensation layer has a maximum thickness. In particular, the compensation layer of the multilayer Laue lens has an in-plane thickness gradient laterally offset by 90° as compared to other layers in the first and second multilayer sections, thereby eliminating the strict requirement of the placement error.

Abstract: A process is disclosed for sectioning by etching of monolayers and multilayers using an RIE technique with fluorine-based chemistry. In one embodiment, the process uses Reactive Ion Etching (RIE) alone or in combination with Inductively Coupled Plasma (ICP) using fluorine-based chemistry alone and using sufficient power to provide high ion energy to increase the etching rate and to obtain deeper anisotropic etching. In a second embodiment, a process is provided for sectioning of WSi2/Si multilayers using RIE in combination with ICP using a combination of fluorine-based and chlorine-based chemistries and using RF power and ICP power. According to the second embodiment, a high level of vertical anisotropy is achieved by a ratio of three gases; namely, CHF3, Cl2, and O2 with RF and ICP. Additionally, in conjunction with the second embodiment, a passivation layer can be formed on the surface of the multilayer which aids in anisotropic profile generation.

Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.

Abstract: A zone plate multilayer structure includes a substrate carrying a plurality of alternating layers respectively formed of tungsten silicide (WSi2) and silicon (Si). The alternating layers are sequentially deposited precisely controlling a thickness of each layer from a minimum thickness of a first deposited layer adjacent the substrate to a maximum thickness of a last deposited layer. The first minimum thickness layer has a selected thickness of less than or equal to 5 nm with the thickness of the alternating layers monotonically increasing to provide a zone plate multilayer structure having a thickness of greater than 12 ?m (microns). The x-rays are diffracted in Laue transmission geometry by the specific arrangement of silicon and tungsten silicide.