Abstract: A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

Abstract: A system and method (referred to as the system) fabricates controllable atomic assemblies in two and three dimensions. The systems identify by a non-invasive imager, a local atomic structure, distribution of vacancies, and dopant atoms and modify, by a microscopic modifier, the local atomic structure, via electron beam irradiation. The systems store, by a knowledge base, cause-and-effect relationships based on a non-invasive imaging and electron scans. The systems detect, by detectors, changes in the local atomic structure induced by the electron irradiation; and fabricate, a modified atomic structure by a beam control software and feedback.

Abstract: A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

Abstract: A method for the desalination of water, the method comprising flowing salt water through a free-standing single-layer membrane of nanoporous graphene having a first planar side that makes contact with the salt water and an opposing second planar side from which desalinated water exits, wherein said membrane contains nanopores having a size of up to 1 nm, along with a substantial absence of pores above 1 nm in size, wherein said nanopores up to 1 nm in size have pore edges passivated with silicon, wherein salt ions in said salt water are blocked from passing through said membrane while water in said salt water passes through said membrane to result in desalinated water exiting said membrane.

Abstract: A method for sculpting crystalline oxide structures for bulk nanofabrication is provided. The method includes the controlled electron beam induced irradiation of amorphous and liquid phase precursor solutions using a scanning transmission electron microscope. The atomically focused electron beam includes operating parameters (e.g., location, dwell time, raster speed) that are selected to provide a higher electron dose in patterned areas and a lower electron dose in non-patterned areas. Concurrently with the epitaxial growth of crystalline features, the present method includes scanning the substrate to provide information on the size of the crystalline features with atomic resolution. This approach provides for atomic level sculpting of crystalline oxide materials from a metastable amorphous precursor and the liquid phase patterning of nanocrystals.

Abstract: A method for the desalination of water, the method comprising flowing salt water through a free-standing single-layer membrane of nanoporous graphene having a first planar side that makes contact with the salt water and an opposing second planar side from which desalinated water exits, wherein said membrane contains nanopores having a size of up to 1 nm, along with a substantial absence of pores above 1 nm in size, wherein said nanopores up to 1 nm in size have pore edges passivated with silicon, wherein salt ions in said salt water are blocked from passing through said membrane while water in said salt water passes through said membrane to result in desalinated water exiting said membrane.