Patents by Inventor Raymond Takling Lee

Raymond Takling Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon
    Patent number: 6166428
    Abstract: A semiconductor device having at least a first and second type of devices formed in the substrate of the semiconductor device and having a hydrogen free barrier layer formed by implanting nitrogen into a layer of amorphous silicon or polysilicon formed on the surface of the semiconductor device. A hydrogen getter layer is formed on the semiconductor device under the barrier layer. The hydrogen getter layer is removed from portions of the semiconductor device on which salicide layers are to be formed.
    Type: Grant
    Filed: August 25, 1997
    Date of Patent: December 26, 2000
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Sunil D. Mehta, William G. En, Darin Arthur Chan, Raymond Takling Lee