Abstract: A method for forming a semiconductor device can include electrically testing a plurality of semiconductor dies in wafer form subsequent to performing a first wafer dicing process, then performing a second wafer dicing process to dice the wafer and to singularize the plurality of semiconductor dies. Electrically testing the plurality of semiconductor dies in wafer form subsequent to the first dicing process can identify chips damaged during the first dicing process. The method can also include forming a plurality of grooves between adjacent dies which leaves a full wafer thickness at a perimeter of the wafer to result in a wafer which is more resistant to deflection and damage during handling.

Abstract: System and method for creating single stud bumps having an increased stand-off height. A preferred embodiment includes a method of using a capillary for creating stud bumps in a flip chip assembly, the capillary includes a hole section adapted to pass a wire, a chamfer section providing a transition from the hole section to a stud bump section, and a sidewall within the stud bump section, the sidewall having a sidewall height, wherein the side wall height is equal to, or greater than, the a diameter of the stud bump section.

Abstract: System and method for creating single stud bumps having an increased stand-off height. A preferred embodiment comprises a capillary for use in creating stud bumps in a flip chip assembly, comprising a hole section adapted to pass a wire, a chamfer section providing a transition from the hole section to a stud bump section, and a sidewall within the stud bump section, the sidewall having a sidewall height, wherein the side wall height is equal to, or greater than, the a diameter of the stud bump section.