Abstract: A bulk acoustic wave resonant structure and a preparation method therefor, and an acoustic wave device are provided. The bulk acoustic wave resonant structure includes: a substrate; a reflection structure, a first electrode, a piezoelectric layer and a second electrode, which are successively located on the substrate, wherein the first electrode comprises a first sub-electrode located in a first region and a second sub-electrode located in a second region other than the first region, and the piezoelectric layer respectively comes into direct contact with the first sub-electrode and the second electrode in the first region; and a first gap, which is located between the piezoelectric layer and the second sub-electrode, wherein an orthographic projection of the first gap on the substrate surrounds the first region.

Abstract: A bulk acoustic wave resonator includes: a substrate; a reflective structure, a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate; and a suspended protruding block. The suspended protruding block is located on the piezoelectric layer outside an edge region and at least surrounds a first region, with a gap structure located between the suspended protruding block and the piezoelectric layer in the first region, and between the suspended protruding block and the second electrode layer in the first region. The top surface of the suspended protruding block is higher than the top surface of the second electrode layer, and the first region includes a portion of a non-resonance region adjacent to a resonance region.

Abstract: Provided in the embodiments of the present disclosure are a bulk acoustic wave resonant structure and a preparation method therefor, and an acoustic wave device.

Abstract: A bulk acoustic wave resonant structure and a preparation method therefor, and an acoustic wave device are provided. The bulk acoustic wave resonant structure includes: a substrate; a reflection structure, a first electrode, a piezoelectric layer and a second electrode, which are successively located on the substrate, wherein the first electrode comprises a first sub-electrode located in a first region and a second sub-electrode located in a second region other than the first region, and the piezoelectric layer respectively comes into direct contact with the first sub-electrode and the second electrode in the first region; and a first gap, which is located between the piezoelectric layer and the second sub-electrode, wherein an orthographic projection of the first gap on the substrate surrounds the first region.

Abstract: Embodiments of the present disclosure provide a bulk acoustic wave resonance structure and a preparation method therefor, and an acoustic wave device. The bulk acoustic wave resonance structure comprises: a substrate; a reflection structure, a first electrode, a piezoelectric layer, and a second electrode, which are sequentially located on the substrate, the effective region of a resonance area being a first overlapping area; a first surrounding structure surrounding the first overlapping area, said structure comprising first protruding structures and first intermittent structures that are arranged at intervals; and the first protruding structures, which are located between the piezoelectric layer and the first electrode and/or are located between the piezoelectric layer and the second electrode, the end of each first protruding structure that is close to the first overlapping area being covered by the first electrode and/or the second electrode.

Abstract: A bulk acoustic wave resonant structure includes a substrate, and a reflection structure, a first electrode layer, a piezoelectric layer and a second electrode layer, which are sequentially stacked on the substrate, wherein ring-shaped grooves are provided in the piezoelectric layer; and the grooves are located in an active area and are close to an edge of the active area.

Abstract: An acoustic device includes a plurality of bulk acoustic resonance structures. Each of the bulk acoustic resonance structures includes a substrate. The bulk acoustic resonance structure further includes a reflective structure, a first electrode layer, a piezoelectric layer and a second electrode layer stacked on the substrate in sequence. The bulk acoustic resonance structure further includes multiple protruding blocks located on the piezoelectric layer and circumferentially arranged around the second electrode layer, wherein the multiple protruding blocks have a preset distance from the second electrode layer, and the preset distance depends on a connection manner between the bulk acoustic resonance structure and other ones of multiple bulk acoustic resonance structures.

Abstract: The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

Abstract: An acoustic wave device includes a substrate, as well as a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially arranged on the substrate. The device further includes a protective layer. The protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer. The first position is a position, corresponding to a first overlapping region, above the second electrode layer. The first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped. A fabrication method for an acoustic wave device is also provided.

Abstract: An acoustic wave device includes a substrate, as well as a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially arranged on the substrate. The device further includes a protective layer. The protective layer is at least arranged at a first position above the surface, far away from the substrate, of the second electrode layer. The first position is a position, corresponding to a first overlapping region, above the second electrode layer. The first overlapping region, where an active area of the acoustic wave device is located, is at least a part of a region where the first electrode layer, the second electrode layer and the piezoelectric layer are overlapped. A fabrication method for an acoustic wave device is also provided.

Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a substrate, a packaging component provided on the substrate and a MEMS component provided inside the packaging component and on the substrate. The device further includes a sealing component. The sealing component is provided on the substrate and/or the packaging component, for preventing an external small molecule from contacting with the MEMS component.

Abstract: A Micro-Electro-Mechanical System (MEMS) device includes a substrate, a packaging component provided on the substrate and a MEMS component provided inside the packaging component and on the substrate. The device further includes a sealing component. The sealing component is provided on the substrate and/or the packaging component, for preventing an external small molecule from contacting with the MEMS component.

Abstract: The invention provides a film bulk acoustic resonator including a layered structure composed of a top electrode, a piezoelectric layer and a bottom electrode, and a substrate; a reflective interface is arranged between the bottom electrode and the substrate; and by defining the shape of all or part of the layered structure, the purpose of suppressing the lateral mode can be achieved, and without adding new process, the manufacturing cost of the device can be controlled, and the benefit of product development can be maximized.

Abstract: A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial area on the acoustic wave device; forming a sacrificial layer on the sacrificial area; covering a metal covering layer on the sacrificial layer and connecting a bottom rim of the metal covering layer to the acoustic wave device and forming an opening between the bottom rim of the metal covering layer and the acoustic wave device; and removing the sacrificial layer to form a cavity between the metal covering layer and the resonant area by using a chemical solution, wherein the chemical solution enters from the opening between the metal covering layer and the acoustic wave device.

Abstract: A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.

Abstract: A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed on at least one of the first surface and the second surface and connected with the other. At least one protection ring is formed on at least one of the first surface and the second surface and having a first gap with the other. At least one electrical device is formed on at least one of the first surface and the second surface and is located inside at least one of the at least one protection ring, wherein the at least one electrical device includes a temperature sensor.

Abstract: A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area on a surface of a substrate during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device, wherein at least one electrical device is provided on the surface of the substrate and the at least one electrical device includes a temperature sensor. The acoustic wave device protection structure comprising: a metal covering layer, having a concave surface and a bottom rim, the bottom rim connected to the acoustic wave device and forming at least one opening between the bottom rim and the acoustic wave device, and the concave surface covering over the resonant area to form a cavity between the concave surface and the resonant area.

Abstract: A chip stack having a protection structure for semiconductor device package comprises a first chip and a second chip stacked with each other. A first surface of the first chip and a second surface of the second chip are facing to each other. At least one metal pillar is formed on at least one of the first surface and the second surface and connected with the other. At least one protection ring is formed on at least one of the first surface and the second surface and having a first gap with the other. At least one electrical device is formed on at least one of the first surface and the second surface and is located inside at least one of the at least one protection ring, wherein the at least one electrical device includes a temperature sensor.

Abstract: A chip stack having a protection structure for semiconductor device package, which comprises a first chip and a second chip stacked with each other, wherein said first chip has a first surface, said second chip has a second surface, said first surface and said second surface are two surfaces facing to each other, wherein at least one metal pillar is formed on at least one of said first surface and said second surface and connected with the other, at least one protection ring is formed on at least one of said first surface and said second surface and having a first gap with the other, and at least one electrical device is formed on at least one of said first surface and said second surface, wherein said at least one electrical device is located inside at least one of said at least one protection ring.

Abstract: A protective cover for an acoustic wave device and a fabrication method thereof, for protecting an acoustic wave device having a resonant area during a packaging operation so as to avoid molding compound flowing onto the resonant area of the acoustic wave device. The fabrication method comprises: defining a sacrificial area on the acoustic wave device; forming a sacrificial layer on the sacrificial area; covering a metal covering layer on the sacrificial layer and connecting a bottom rim of the metal covering layer to the acoustic wave device and forming an opening between the bottom rim of the metal covering layer and the acoustic wave device; and removing the sacrificial layer to form a cavity between the metal covering layer and the resonant area by using a chemical solution, wherein the chemical solution enters from the opening between the metal covering layer and the acoustic wave device.