Patents by Inventor Rebecca Elizabeth Jones
Rebecca Elizabeth Jones has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20190288147Abstract: Dilute nitride optical absorber materials having graded doping profiles are disclosed. The materials can be used in photodetectors and photovoltaic cells. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.Type: ApplicationFiled: June 4, 2019Publication date: September 19, 2019Inventors: PRANOB MISRA, REBECCA ELIZABETH JONES-ALBERTUS, TING LIU, ILYA FUSHMAN, HOMAN B. YUEN
-
Patent number: 10355159Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.Type: GrantFiled: November 6, 2015Date of Patent: July 16, 2019Assignee: SOLAR JUNCTION CORPORATIONInventors: Pranob Misra, Rebecca Elizabeth Jones-Albertus, Ting Liu, Ilya Fushman, Homan B. Yuen
-
Publication number: 20190013430Abstract: Compound semiconductor alloys comprising dilute nitride materials, are materials used in absorbing layers for photodetectors, power converters, solar cells, and in particular to high efficiency, electronic and optoelectronic devices, including multijunction solar cells, photodetectors, power converters, and the like, formed primarily of III-V semiconductor alloys. The absorbing (or active) layers achieve improved characteristics including band gap optimization and minimization of defects.Type: ApplicationFiled: September 14, 2018Publication date: January 10, 2019Applicant: Solar Junction CorporationInventors: Rebecca Elizabeth JONES-ALBERTUS, Pranob MISRA, Michael J. SHELDON, Homan B. YUEN, Ting LIU, Daniel DERKACS, Vijit SABNIS, Michael West WIEMER, Ferran SUAREZ
-
Publication number: 20180358499Abstract: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.Type: ApplicationFiled: August 14, 2018Publication date: December 13, 2018Inventors: REBECCA ELIZABETH JONES-ALBERTUS, DANIEL DERKACS, TING LIU, PRANOB MISRA, EVAN PICKETT, VIJIT SABNIS, MICHAEL J. SHELDON, FERRAN SUAREZ, MICHAEL WIEMER, HOMAN B. YUEN
-
Patent number: 9985152Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: December 27, 2016Date of Patent: May 29, 2018Assignee: SOLAR JUNCTION CORPORATIONInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
-
Publication number: 20170338357Abstract: Dilute nitride subcells with graded doping are disclosed. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.Type: ApplicationFiled: May 15, 2017Publication date: November 23, 2017Inventors: TING LIU, PRANOB MISRA, HOMAN BERNARD YUEN, REBECCA ELIZABETH JONES-ALBERTUS
-
Publication number: 20170110607Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: December 27, 2016Publication date: April 20, 2017Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
-
Publication number: 20160118526Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell.Type: ApplicationFiled: November 6, 2015Publication date: April 28, 2016Inventors: PRANOB MISRA, REBECCA ELIZABETH JONES-ALBERTUS, TING LIU, ILYA FUSHMAN, HOMAN B. YUEN
-
Publication number: 20160111569Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
-
Patent number: 9252315Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: April 3, 2015Date of Patent: February 2, 2016Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
-
Publication number: 20150372178Abstract: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.Type: ApplicationFiled: January 30, 2015Publication date: December 24, 2015Inventors: Rebecca Elizabeth Jones-Albertus, Pranob Misra, Michael J. Sheldon, Homan B. Yuen, Ting Liu, Daniel Derkacs, Vijit Sabnis, Michael West Wiemer, Ferran Suarez
-
Patent number: 9214580Abstract: A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell.Type: GrantFiled: October 28, 2010Date of Patent: December 15, 2015Assignee: Solar Junction CorporationInventors: Pranob Misra, Rebecca Elizabeth Jones, Ting Liu, Ilya Fushman, Homan Bernard Yuen
-
Publication number: 20150214412Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: April 3, 2015Publication date: July 30, 2015Inventors: Rebecca Elizabeth Jones-Albertus, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
-
Publication number: 20150122318Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: January 15, 2015Publication date: May 7, 2015Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LIU, PRANOB MISRA
-
Patent number: 9018522Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: October 10, 2014Date of Patent: April 28, 2015Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Homan Bernard Yuen, Ting Liu, Pranob Misra
-
Patent number: 8962993Abstract: Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.Type: GrantFiled: December 7, 2012Date of Patent: February 24, 2015Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Pranob Misra, Michael J. Sheldon, Homan B. Yuen, Ting Liu, Daniel Derkacs, Vijit Sabnis, Michael West Wiemer, Ferran Suarez
-
Patent number: 8962991Abstract: Photovoltaic cells with one or more subcells are provided with a wide band gap, pseudomorphic window layer of at least 15 nm in thickness and with an intrinsic material lattice constant that differs by at least 1% from an adjacent emitter layer. This window layer has a higher band gap than a window layer with substantially the same intrinsic material lattice constant as the adjacent emitter layer, which increases the light transmission through the window, thereby increasing the current generation in the solar cell. The quality of being pseudomorphic material preserves a good interface between the window and the emitter, reducing the minority carrier surface recombination velocity. A method is provided for building a wide band gap, pseudomorphic window layer of a photovoltaic cell that has an intrinsic material lattice constant that differs by at least 1% from the adjacent emitter layer.Type: GrantFiled: February 10, 2012Date of Patent: February 24, 2015Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Ferran Suarez Arias, Michael West Wiemer, Michael J. Sheldon, Homan B. Yuen
-
Publication number: 20150027520Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: ApplicationFiled: October 10, 2014Publication date: January 29, 2015Inventors: REBECCA ELIZABETH JONES-ALBERTUS, HOMAN BERNARD YUEN, TING LlU, PRANOB MISRA
-
Patent number: 8912433Abstract: An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07?x?0.18, 0.025?y?0.04 and 0.001?z?0.03.Type: GrantFiled: January 11, 2013Date of Patent: December 16, 2014Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones, Homan Bernard Yuen, Ting Liu, Pranob Misra
-
Patent number: 8766087Abstract: A multilayer window structure for a solar cell comprises one or more layers where the bottom layer has an intrinsic material lattice spacing that is substantially the same as the emitter in the plane perpendicular to the direction of epitaxial growth. One or more upper layers of the window structure has progressively higher band gaps than the bottom layer and has intrinsic material lattice spacing is substantially different than the emitter intrinsic material lattice spacing.Type: GrantFiled: May 10, 2011Date of Patent: July 1, 2014Assignee: Solar Junction CorporationInventors: Rebecca Elizabeth Jones-Albertus, Ferran Suarez-Arias, Michael West Wiemer, Michael J. Sheldon, Homan Yuen