Patents by Inventor Rebecca Welty

Rebecca Welty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HBT with nitrogen-containing current blocking base collector interface and method for current blocking
    Patent number: 6674103
    Abstract: An improved HBT of the invention reduces the current blocking effect at the base-collector interface. Nitrogen is incorporated at the base-collector interface in an amount sufficient to reduce the conduction band energy of the collector at the base-collector interface to equal the conduction band energy of the base. In a preferred embodiment, a nitrogen concentration on the order of 2% is used in a thin ˜20 nm layer at the base-collector interface. Preferred embodiment HBTs of the invention include both GaAs HBTs and InP transistors in various layer structures, e.g., single and double heterojunction bipolar transistors and blocked hole bipolar transistors.
    Type: Grant
    Filed: July 31, 2001
    Date of Patent: January 6, 2004
    Assignee: The Regents of the University of California
    Inventors: Charles W. Tu, Peter M. Asbeck, Kazuhiro Mochizuki, Rebecca Welty
  • HBT with nitrogen-containing current blocking base collector interface and method for current blocking
    Publication number: 20020079511
    Abstract: An improved HBT of the invention reduces the current blocking effect at the base-collector interface. Nitrogen is incorporated at the base-collector interface in an amount sufficient to reduce the conduction band energy of the collector at the base-collector interface to equal the conduction band energy of the base. In a preferred embodiment, a nitrogen concentration on the order of 2% is used in a thin ˜20nm layer at the base-collector interface. Preferred embodiment HBTs of the invention include both GaAs HBTs and InP transistors in various layer structures, e.g., single and double heterojunction bipolar transistors and blocked hole bipolar transistors.
    Type: Application
    Filed: July 31, 2001
    Publication date: June 27, 2002
    Inventors: Charles W. Tu, Peter M. Asbeck, Kazuhiro Mochizuki, Rebecca Welty