Abstract: The present invention relates to a compound of formula (I) and an organic electronic device comprising a semiconductor layer which comprises a compound of formula (I).

Abstract: The present invention relates to an organic electronic device comprising a semiconductor layer which comprises a compound of formula (1).

Abstract: The present invention relates to a compound of formula 1 and an organic electronic device comprising an organic semiconductor layer, wherein at least one organic semiconductor layer comprises a compound of formula (1), wherein X is selected from O, S or Se; Ar1 is selected from unsubstituted or substituted C2 to C60 heteroarylene, and wherein the substituted C2 to C60 heteroarylene comprises at least about one to about six substituents, wherein the substituent of the substituted C2 to C60 heteroarylene are independently selected from C1 to C12 alkyl, C1 to C12 alkoxy, CN, OH, halogen, C6 to C36 arylene, or C2 to C25 heteroarylene; n is 1 or 2; L1 is selected from a single bond, C1 to C4 alkyl, substituted or unsubstituted C6 to C36 arylene, wherein the substituent of substituted C6 to C36 arylene is selected from C1 to C12 alkyl, C6 to C18 arylene; L2 is selected from a single bond or C1 to C6 alkyl; R1, R2 are independently selected from substituted or unsubstituted C1 to C16 alkyl, wherein the substituent o

Abstract: The present invention relates to an organic light emitting diode comprising an anode, a cathode, a first emission layer, a second emission layer, a first charge generation, layer and a first electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to a compound of Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C6 to C24 aryl group, wherein at least one substituent of the substituted C6 to C24 aryl group is selected from CN or partially or fully fluorinated C1 to C12 alkyl. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 4-(2,4-dioxopent-3-yl)-2,3,5,6-tetrafluorobenzonitrile, such as e.g. Fe, Al and Cu complexes thereof.

Abstract: The present invention relates to compound represented by Formula (I) wherein M is a metal; L is a charge-neutral ligand, which coordinates to the metal M; n is an integer selected from 1 to 4, which corresponds to the oxidation number of M; m is an integer selected from 0 to 2; R1, R2 and R3 are substituents, wherein at least one R1, R2 and/or R3 is selected from a substituted C2 to C24 heteroaryl group, wherein at least one substituent is selected from halogen, F, Cl, CN, partially or fully fluorinated C1 to C6 alkyl, partially or fully fluorinated C1 to C6 alkoxy. The present invention also relates to a semiconductor material comprising at least one compound of formula (I), an semiconductor layer comprising at least one compound of formula (I) and an electronic device comprising at least one compound of formula (I). Exemplary compounds are e.g. metal complexes of 3-(2,3,5-trifluoro-6-(trifluoromethyl)pyridin-4-yl)pentane-2,4-dione, such as e.g.

Abstract: The present invention relates to a compound of formula (I) and an organic electronic device comprising a semiconductor layer which comprises a compound of formula (I).

Abstract: The present invention relates to a compound of formula (I) for use in organic electronic devices, a composition comprising a compound of formula (IV) and at least one compound of formula (IVa) to (IVd), an organic semiconductor layer comprising the compound or composition, an organic electronic device comprising the organic semiconductor layer, and a display device comprising the organic electronic device.

Abstract: The present invention relates to an organic light emitting diode comprising a substrate, an anode, a cathode, an emission layer, an electron injection layer and an electron transport layer stack; and to a display device or lighting device comprising the same.

Abstract: The present invention relates to an organic electronic device comprising a substrate (110), an anode layer (120), a cathode layer (190), at least one first emission layer (150), and a hole injection layer (130), wherein • - the hole injection layer comprises a metal complex, wherein • - the metal complex comprises at least one electropositive metal atom having an electro-negativity value according to Allen of less than 2.

Abstract: The present invention relates to an organic electroluminescent device comprising an anode, a cathode, an emission layer, an undoped electron transport layer comprising a first matrix compound, and an electron injection layer comprising a second matrix compound and an alkali organic complex and/or alkali halide, wherein the undoped electron transport layer and the electron injection layer are arranged between the emission layer and the cathode, wherein the reduction potential of the first matrix compound is less negative than, the reduction potential of 9,10-di(naphthalen-2-yl)anthracene and more negative than the reduction potential of 4,4?-bis(4,6-diphenyl-1,3,5-triazin-2-yl)biphenyl, wherein the reduction potential in both cases is measured against Fc/Fc+ in tetrahydrofurane; and the dipole moment of the first matrix compound is selected ?0 Debye and ?2.5 Debye and the dipole moment of the second matrix compound is selected >2.5 and <10 Debye.

Abstract: The present invention relates to the compound represented by the general Formula (I): wherein X is selected from the group consisting of O, S and Se; R1 and R2 are independently selected from the group consisting of C1 to C12 alkyl, C6 to C20 aryl and C5 to C20 heteroaryl, wherein the respective C1 to C12 alkyl may optionally be substituted with C6-C20 aryl; L represents a single bond or is selected from the group consisting of C6 to C18 arylene or C2 to C20 heteroarylene; wherein the rings B, C and D may each be unsubstituted or substituted and B and C are anellated aromatic 6-membered rings; R3 and R4 are independently selected from the group consisting of unsubstituted or substituted C1 to C12 alkyl, unsubstituted or substituted C1 to C12 fluorinated alkyl, unsubstituted or substituted C6 to C20 aryl and unsubstituted or substituted C5 to C20 heteroaryl; wherein the substituents, if present in B, C, D, R3 and R4, are independently selected from the group consisting of C1-C20 linear alkyl, C3-C20 branc

Abstract: The present invention relates to a triazine compound according to formula 1: suitable for use as a layer material for electronic devices, and to an organic semiconductor layer comprising at least one compound according to formula 1, as well as to an organic electronic device comprising at least one organic semiconductor layer, and a method of manufacturing the same.

Abstract: The present invention relates to a compound of formula 1 and an organic electronic device comprising an organic semiconductor layer, wherein at least one organic semiconductor layer comprises a compound of formula (1), wherein L1 has the formula (2) and L2 has the formula (3), wherein L1 and L2 are bonded at “*” via a single bond independently to the same or different arylene groups or heteroarylenes group of Ar1; and wherein X1, X2 are independently selected from O, S and Se; Ar1 is selected from substituted or unsubstituted C20 to C52 arylene or C14 to C64 heteroarylene, wherein the substituent of the substituted C20 to C52 arylene or C14 to C64 heteroarylene are independently selected from C1 to C12 alkyl, C1 to C12 alkoxy, CN, halogen, OH, C6 to C25 aryl and C2 to C21 heteroaryl; R1, R2 are independently selected from substituted or unsubstituted C1 to C16 alkyl, wherein the substituent of substituted C1 to C16 alkyl is selected from C6 to C18 arylene or C2 to C12 heteroarylene; R3, R4 are independently s

Abstract: The present invention relates to a method for preparing an organic semiconducting layer comprising the steps: a) providing a first composition in a first vacuum thermal evaporation source, the first composition comprising aa) a first organic compound, the first organic compound comprising at least one unsubstituted or substituted C10-C30 condensed aryl group and/or at least one unsubstituted or substituted C3-C30 heteroaryl group, wherein the one or more substituent(s) if present, are selected from the group consisting of (i) deuterium, (ii) a halogen, (iii) a C1 to C22 silyl group, (iv) a C1 to C30 alkyl group, (v) a C1 to C10 alkylsilyl group, (vi) a C6 to C22 arylsilyl group, (vii) a C3 to C30 cycloalkyl group, (viii) a C2 to C30 heterocycloalkyl group, (ix) a C6 to C30 aryl group, (x) a C2 to C30 heteroaryl group, (xi) a C1 to C30 perfluoro-hydrocarbyl group, or (xii) a C1 to C10 trifluoroalkyl group, wherein the first organic compound has i) a dipole moment in the range of ?0 and ?2 Debye; and ii) a mole

Abstract: The invention relates to an Organic light emitting diode comprising an anode electrode, a cathode electrode, at least one emission layer and an organic semiconductor layer, wherein the organic semiconductor layer is arranged between the anode electrode and the cathode electrode and the organic semiconductor layer comprises an alkali organic complex and a compound of formula 1 wherein X is selected from O, S or Se; and R1 and R2 are independently selected from the group consisting of C6 to C18 aryl group and C5 to C18 heteroaryl group, wherein each of R1 and R2 may independently be unsubstituted or substituted with at least one C1 to C12 alkyl group or C1 to C12 alkoxy group, preferably C1 to C4 alkyl group or C1 to C4 alkoxy group; and each R3, R4, R5, and R6 are independently selected from the group consisting of H, C1 to C12 alkyl group or C1 to C12 alkoxy group, preferably H, C1 to C4 alkyl group or C1 to C4 alkoxy group; a method for preparing the same and the compound of Formula 1 comprised therein.

Abstract: The present invention relates to compounds according to formula 1: suitable for use as a layer material for electronic devices, and to an organic semiconductor layer comprising at least one compound according to formula 1, as well as to an organic electronic device comprising at least one organic semiconductor layer thereof, and a method of manufacturing the same.

Abstract: The present invention relates to a compound represented by the general formula (I): (formula I) an organic semiconducting layer comprising the compound, an organic electronic device comprising the organic semiconducting layer and a device comprising the organic electronic device.

Abstract: The present invention relates to a triazine compound according to formula 1: suitable for use as a layer material for electronic devices, and to an organic semiconductor layer comprising at least one compound according to formula 1, as well as to an organic electronic device comprising at least one organic semiconductor layer, and a method of manufacturing the same.

Abstract: The present invention relates to the compound represented by the general Formula (I): wherein X is selected from the group consisting of O, S and Se; R1 and R2 are independently selected from the group consisting of C1 to C12 alkyl, C6, to C20 aryl and C5 to C20 heteroaryl, wherein the respective C1, to C12 alkyl may optionally be substituted with C6-C20 aryl; L represents a single bond or is selected from the group consisting of C6 to C18 arylene or C2 to C20 heteroalylene; wherein the rings B, C and D may each be unsubstituted or substituted and B and C are anellated aromatic 6-membered rings; R3 and R4 are independently selected from the group consisting of unsubstituted or substituted C1 to C12 alkyl, unsubstituted or substituted C1 to G12 fluorinated alkyi, unsubstituted or substituted C6 to C20 aryl and unsubstituted or substituted C5 to C20 heteroaryl; wherein the substituents, if present in B, C, D, R3 and R4, are independently selected from the group consisting of C1-C20 linear alkyl, C3 -C20 branche