Abstract: A semiconductor device includes an electronics carrier, an electrically conductive receptacle attached to a first pad of the electronics carrier, and an electrically conductive press-fit connector including a flange and a base portion extending from the flange to a first end of the press-fit connector, wherein the press-fit connector is in a secured position whereby the base portion is disposed within and securely retained by the receptacle, and wherein the base portion of the press-fit connector is configured to maintain vertical separation between the flange and an upper end of the receptacle in the secured position.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging at least one semiconductor substrate in a housing, each semiconductor substrate including a first metallization layer attached to a dielectric insulation layer, the housing including a through hole extending through a component of the housing; inserting a fastener into the through hole such that an upper portion of the fastener is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a mounting surface, the mounting surface comprising a hole, wherein the housing is arranged on the mounting surface such that the through hole is aligned with the hole in the mounting surface; and exerting a force on the printed circuit board such that the force causes the fastener to be pressed into the hole in the mounting surface so as to secure the housing to the mounting surface.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Abstract: A housing for a power semiconductor module arrangement includes sidewalls and a lid. The lid includes a first layer of a first material having a plurality of openings, and second layer of a second material that is different from the first material. The second layer completely covers a bottom surface of the first layer. The second layer includes a plurality of protrusions, each protrusion extending into a different one of the plurality of openings of the first layer such that each of the plurality of openings is completely covered by one of the protrusions.

Abstract: A method for producing a power semiconductor module arrangement includes: arranging a semiconductor substrate in a housing, the housing including a through hole extending through a component of the housing; inserting a pin or bolt into the through hole such that an upper end of the pin/bolt is not inserted into the through hole; arranging a printed circuit board on the housing; arranging the housing on a heat sink having a hole, the housing being arranged on the heat sink such that the through hole is aligned with the hole in the heat sink; and by way of a first pressing tool, exerting a force on a defined contact area of the printed circuit board and pressing the pin/bolt into the hole in the heat sink, wherein the defined contact area is arranged directly above the pin/bolt.

Abstract: A power semiconductor module arrangement includes a substrate including a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, and a second metallization layer arranged on a second side of the dielectric insulation layer, the dielectric insulation layer being disposed between the first and second metallization layers. The arrangement further includes at least one first connection element mounted on the substrate, a housing having sidewalls, and at least one second connection element. Each second connection element includes a first part extending vertically through a sidewall of the housing, a second part coupled to a first end of the first part and protruding from the sidewall in a vertical direction, and a third part coupled to a second end of the first part opposite the first end. Each third part is detachably coupled to one of the at least one first connection element.

Abstract: A power semiconductor module arrangement includes a substrate including a dielectric insulation layer, a first metallization layer arranged on a first side of the dielectric insulation layer, and a second metallization layer arranged on a second side of the dielectric insulation layer, the dielectric insulation layer being disposed between the first and second metallization layers. The arrangement further includes at least one first connection element mounted on the substrate, a housing having sidewalls, and at least one second connection element. Each second connection element includes a first part extending vertically through a sidewall of the housing, a second part coupled to a first end of the first part and protruding from the sidewall in a vertical direction, and a third part coupled to a second end of the first part opposite the first end. Each third part is detachably coupled to one of the at least one first connection element.