Abstract: Devices and methods for the measurement and control of fluid using one or two capacitors are described. The devices use Micro-Electro-Mechanical-Systems (MEMS) and radio-frequency inductive coupling to sense the properties of a fluid in a tube. The single and double capacitor devices may be coupled to shunts implantable in a patient and operable to be interrogated non-invasively. The shunts employing the novel capacitor devices are insensitive to stray signals such as the orientation of a patient's head. The devices are operable to employ a wireless external spectrometer to measure passive subcutaneous components.

Abstract: Devices and methods for the measurement and control of fluid using one or two capacitors are described. The devices use Micro-Electro-Mechanical-Systems (MEMS) and radio-frequency inductive coupling to sense the properties of a fluid in a tube. The single and double capacitor devices may be coupled to shunts implantable in a patient and operable to be interrogated non-invasively. The shunts employing the novel capacitor devices are insensitive to stray signals such as the orientation of a patient's head. The devices are operable to employ a wireless external spectrometer to measure passive subcutaneous components.

Abstract: A vibration-powered impact recording device that harvests power from vibrations that affect the device is provided. The recording device is affixed to an object and includes a vibration limit detection and recordation system. The system can include a suitable part that is fixed to the object, and a mass (or other suitable part) that is less firmly attached, with the relative motion between the two parts producing an electrical voltage. The electrical voltage can be used to power an information storage unit that records the details of the impact and optionally other sensors which record other parameters such as temperature, humidity etc. at the time of impact.

Abstract: The present invention is an improved shunt system for draining CSF. The system includes a removable sheath for reduction of catheter clogging during shunt insertion, a catheter with relatively large holes, an extracranial filter to allow non-invasive filter replacement, and a wireless flow/pressure meter to monitor and control CSF flow.

Abstract: A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.

Abstract: A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.

Abstract: A vibration-powered impact recording device that harvests power from vibrations that affect the device is provided. The recording device is affixed to an object and includes a vibration limit detection and recordation system. The system can include a suitable part that is fixed to the object, and a mass (or other suitable part) that is less firmly attached, with the relative motion between the two parts producing an electrical voltage. The electrical voltage can be used to power an information storage unit that records the details of the impact and optionally other sensors which record other parameters such as temperature, humidity etc. at the time of impact.

Abstract: The present invention is an improved shunt system for draining CSF. The system includes a removable sheath for reduction of catheter clogging during shunt insertion, a catheter with relatively large holes, an extracranial filter to allow non-invasive filter replacement, and a wireless flow/pressure meter to monitor and control CSF flow.

Abstract: A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture.

Abstract: A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture. Embodiments of the present disclosure provide a method of depositing nanotubes in a region defined by an aperture, with control over the number of nanotubes to be deposited, as well as the pattern and spacing of nanotubes. For example, electrophoretic deposition, along with proper configuration of the aperture, allows at least one nanotube to be deposited in a target region with nanometer scale precision. Pre-sorting of nanotubes, e.g., according to their geometries or other properties, may be used in conjunction with embodiments of the present disclosure to facilitate fabrication of devices with specific performance requirements.

Abstract: A nanotube field effect transistor and a method of fabrication are disclosed. The method includes electrophoretic deposition of a nanotube to contact a region of a conductive layer defined by an aperture.

Abstract: A nanotube device and a method of depositing nanotubes for device fabrication are disclosed. The method relates to electrophoretic deposition of nanotubes, and allows a control of the number of deposited nanotubes and positioning within a defined region.

Abstract: A process for device fabrication, including coating a wafer with a layer including SiO2, SiNx, and a first resist, defining shallow trench isolation and alignment patterns in the first resist, transferring the first resist pattern into the SiO2 and SiNx, removing the first resist, etching trenches to a depth suitable for shallow trench isolation, coating the wafer with a second photoresist, defining open areas around alignment-marks, etching alignment mark trenches to a depth greater than the trench depth, suitable for alignment mark detection, removing the second resist and the SiNx, depositing SiO2 to fill the trenches for shallow trench isolation and partially fill the alignment mark trenches for alignment mark detection; and performing chemical mechanical polishing, leaving shallow trench isolation features and topographical alignment marks.

Abstract: A process for device fabrication, including coating a wafer with a layer including SiO2, SiNx, and a first resist, defining shallow trench isolation and alignment patterns in the first resist, transferring the first resist pattern into the SiO2 and SiNx, removing the first resist, etching trenches to a depth suitable for shallow trench isolation, coating the wafer with a second photoresist, defining open areas around alignment marks, etching alignment mark trenches to a depth greater than the trench depth, suitable for alignment mark detection, removing the second resist and the SiNx, depositing SiO2 to fill the trenches for shallow trench isolation and partially fill the alignment mark trenches for alignment mark detection; and performing chemical mechanical polishing, leaving shallow trench isolation features and topographical alignment marks.

Abstract: The present invention relates to a method for determining error in a manufacturing system by providing a substrate having first pattern disposed thereon. An energy source such as electromagnetic radiation or particle beams is projected through a shaping member having a second pattern incongruent with the first pattern to form a shaped energy source. The shaped energy source impinges on the first pattern such that a portion of said shaped energy source is reflected, scattered, or transmitted by the first pattern. The portion of the shaped energy source that is reflected, scattered or transmitted by the first pattern is detected to determine the presence or absence of an error in the manufacturing system.In a further aspect, the present invention relates to a method for constructing an error detection system. A waveform representative of at least one manufacturing system parameter is selected. Associated with the waveform is a mathematical function.

Abstract: The present invention is directed to a lithographic process for device fabrication. In lithographic processes for device fabrication, exposing radiation is used to delineate the image of a pattern into a layer of an energy sensitive resist material formed over a substrate. The pattern is then developed and the pattern is introduced into the underlying substrate. In the present invention, the substrate, typically a silicon wafer, is placed in a tool which utilizes electron beams as the exposing radiation. The silicon wafer has topographic alignment marks formed thereon. The alignment marks are used to orient the wafer in the tool accurately. The placement of the wafer in the tool is monitored by observing the intensity of the electron signal backscattered from the surface of the substrate.