Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: A neuromodulation therapy is delivered via at least one electrode implanted subcutaneously and superficially to a fascia layer superficial to a nerve of a patient. In one example, an implantable medical device is deployed along a superficial surface of a deep fascia tissue layer superficial to a nerve of a patient. Electrical stimulation energy is delivered to the nerve through the deep fascia tissue layer via implantable medical device electrodes.

Abstract: The invention is directed to an automated materials processing furnace capable of high temperature operation. The furnace is moveable and enables sample insertion into either end and includes a stationary sample affixed to a replaceable tray. The furnace enables the processing of material samples under both terrestrial and microgravity conditions and also provides for the monitoring of process parameters.

Abstract: A method and apparatus for predicting nodularity of a hypo or hyper eutectic cast iron melt during casting is described. The method is particularly useful for NiMg-treated melts but can also be used for rare earth treated melts. A small sample of the melt is poured into a sample cup to which up to 0.025% wt bismuth is added and a cooling curve is produced during cooling. In a NiMg treated melt, a .DELTA.T (TER-TEU) of at least 9.degree. C. indicates good nodularity. In an RE treated melt, a .DELTA.T of less than 6.degree. C. at a TER/TEU of 1140.degree. C. also indicates good nodularity will be observed upon the solidification of the melt.

Abstract: A process for nitrocarburizing ferrous materials, and the product thereof is described. Material to be treated is packed in a container with a triazine polymer, preferably melone, melem or melam and heated to 500.degree.-900.degree. C. for up to 120 minutes. After treatment the material can be oil quenched to produce a product having a diffusion layer and or a relatively thick hard nitrocarburized (outer) layer which is 40-200 3/4m thick and has a hardness in the range HV 400-1500.

Abstract: A method of producing a cavity package semiconductor device is disclosed. The method includes providing a bar pad having a plurality of bar pad straps, each strap extending outwardly from the outer edge of the bar pad and spaced about the edge of the bar pad; mounting integrated circuits having bond pads on the bar pad; molding a packing material onto a central portion of lead fingers and the bar straps to grip and surround each lead finger with package material, with a portion of each lead finger extending externally from the ring at both the exterior and interior thereof and to secure the bar pad straps therein; electrically coupling the bond pads to the portion of desired ones of the lead fingers extending toward the interior of the ring; and enclosing both ends of the ring to provide a cavity in the ring to suspend a bar pad with the integrated circuit thereon within the cavity with the bar pad straps.

Abstract: An improved castable hypereutectic zinc-aluminum alloy which is free from underside shrinkage is described. Small additions, from about 0.25% and up to about 2 wt% of rare earth metal, preferably in the form of misch metal, to known zinc-aluminum alloys containing from about 20% and up to about 40 wt% aluminum have been found to prevent underside shrinkage in castings with a cross section up to about six inches.

Abstract: An integrated circuit package having a large number of external connections is assembled using two lead frames stacked one atop the other. The lead frames have complementary lead patterns which interdigitate to provide a very close lead spacing at the periphery of a semiconductor chip on which a complex integrated circuit is fabricated.

Abstract: A carrier having a plurality of leads extending from the lateral sides thereof. The leads extending along the lateral side and over protuberances into depressions in the bottom of the carrier. Each of the depressions is separated by ribs from the other depressions. The ends of the leads disposed in the depressions are prevented from substantial movement by the rib to prevent contact with adjacent leads. At least some of the leads are provided with holes disposed adjacent to the exit of the leads from the enclosure of the carrier. The holes in the leads allow the leads greater flexibility at their portions close to the entrance of the leads into the enclosure. The leads are tapered along their length toward the protuberances. Further, the leads are separated by a width along the lateral side which is within the range of slightly greater than the width of the leads to less than the width of the leads to prevent nesting.

Abstract: An abrasion resistant heat treated austenitic manganese steel containing about 1% carbon, 13% manganese and 1.2-2.0% vanadium. The steels are heat treated so as to disperse austenitic grain boundary vanadium carbides uniformly throughout the matrix.