Abstract: A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V?1s?1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.

Abstract: An electronic control cell for at least one organic light-emitting diode (OLED) of a pixel or segment of an active matrix display, the cell including at least one control circuit (6,61,62) with a control input and operating relative to a control signal arriving at a control line (5,5?) and enabling to turn the OLED(s) on, one capacitive storage circuit of the control signal with a capacitor C connected to the control line, one selection circuit (4,41,42) operating relative to a selection signal Vsel on a selection line (3,3?) and enabling electrical connection or insulation of the capacitive storage circuit with/from a control voltage Vcom (2) relative to the selection signal. The storage is temporary by discharging the capacitor through a resistor Rf parallel to the capacitor. Operating methods and a display unit are also disclosed.

Abstract: A transistor for active matrix display and a method for producing the transistor (1). The transistor (1) includes a microcrystalline silicon film (5) and an insulator (3). The crystalline fraction of the microcrystalline silicon film (5) is above 80%. According to the invention, the transistor (1) includes a plasma treated interface (4) located between the insulator (3) and the microcrystalline silicon film (5) so that the transistor (1) has a linear mobility equal or superior to 1.5 cm2V?1s?1, shows threshold voltage stability and wherein the microcrystalline silicon film (5) includes grains (6) whose size ranges between 10 nm and 400 nm. The invention concerns as well a display unit having a line-column matrix of pixels that are actively addressed, each pixel comprising at least a transistor as described above.