Abstract: A loss in the rigidity of a substrate for a liquid discharge head having nozzles at a high density can be suppressed. A liquid discharge head includes plural pressure generating chambers respectively provided with pressure generating elements, plural nozzle apertures respectively communicating with the plural pressure generating chambers and adapted to discharge a liquid, and a reservoir with which the plural pressure generating chambers commonly communicate respectively through communicating parts. The pressure generating chambers and the reservoir respectively have recessed portions formed respectively on one and the other of two principal planes of the same substrate, and the reservoir contains a portion shallower than a portion within the reservoir that communicates with the pressure generating chambers.

Abstract: The invention is to suppress a loss in the rigidity of a substrate for a liquid discharge head having nozzles at a high density. The invention provides a liquid discharge head including plural pressure generating chambers respectively provided with pressure generating elements, plural nozzle apertures respectively communicating with the plural pressure generating chambers and adapted to discharge a liquid, and a reservoir with which the plural pressure generating chambers commonly communicate respectively through communicating parts, wherein the pressure generating chambers and the reservoir respectively have recessed portions formed respectively on one and the other of two principal planes of a same substrate, and the reservoir contains a portion shallower than a communicating part nearby area in the vicinity of the communicating part within the reservoir.

Abstract: A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.

Abstract: A device is formed by transferring a film onto a substrate when the film requires but the substrate is not adapted to a high temperature heat treatment process. The film having layers and formed on a first substrate having layers is transferred onto a second substrate having layers. The method of transferring the film comprises a first step of forming a lift-off layer and the film to be transferred on the first substrate, a second step of bonding the film to be transferred to the second substrate and a third step of separating the film to be transferred from the first substrate by etching the lift-off layer and transferring it onto the second substrate.