Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: Provided is a substrate processing method for processing a substrate. The substrate processing method includes a step of processing the substrate with a phosphoric acid liquid, a step of processing the substrate with a rinsing liquid, and a step of processing the substrate with a chemical liquid containing ammonia. After the substrate is processed with the rinsing liquid, the step of processing the substrate with a chemical liquid removes a portion of thickness of a film in a depth direction of a phosphorus diffusion region from the phosphorus diffusion region formed in the substrate when the substrate is processed with the phosphoric acid liquid.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing method includes a forcing member disposing step of disposing a facing member such that the facing member faces an upper surface of a horizontally held substrate; a space forming step of forming a space where movement of the atmosphere in from and out to an outside is restricted by the substrate, the facing member, and a guard that surrounds the substrate and the facing member in plan view; an inert gas supplying step of supplying an inert gas to the space; an interval adjusting step of adjusting an interval between the upper surface of the substrate and the facing member by relatively raising/lowering the facing member with respect to the substrate while maintaining the space; and a processing liquid supplying step of supplying a processing liquid to the upper surface of the substrate after the interval adjusting step.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the low surface tension liquid, an opening-forming step of forming an opening in the center region of the liquid film, a liquid film removal step of removing the liquid film from the upper surface of the substrate by widening the opening, a low surface tension liquid supply step of supplying a low surface tension liquid toward a first liquid landing point which is set on the outside of the opening, a hydrophobic agent supply step of supplying a hydrophobic agent toward a second liquid landing point which is set on the outside of the opening and further from the opening than the first liquid landing point, and a liquid landing point moving step of moving the first liquid landing point and the second liquid landing point so as to follow widening of the opening.

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: Provided is a substrate processing method for processing a substrate. The substrate processing method includes a step of processing the substrate with a phosphoric acid liquid, a step of processing the substrate with a rinsing liquid, and a step of processing the substrate with a chemical liquid containing ammonia. After the substrate is processed with the rinsing liquid, the step of processing the substrate with a chemical liquid removes a portion of thickness of a film in a depth direction of a phosphorus diffusion region from the phosphorus diffusion region formed in the substrate when the substrate is processed with the phosphoric acid liquid.

Abstract: A substrate processing apparatus includes: a spin chuck adapted to hold a substrate having a substantially circular outer shape with the principal surface of the substrate set substantially horizontally and rotate the substrate with the center of the substrate as a rotation center; a processing liquid ejection nozzle adapted to eject a processing liquid to the circumferential edge part of the substrate rotated held by the spin chuck; and a cup adapted to be disposed in the external circumferential part of the substrate rotated held by the spin chuck and collect the processing liquid scattered from the substrate, and further includes, above the surface of the substrate rotated held by the spin chuck, an anti-splash member that is disposed between a collision position where the processing liquid scattered from the substrate collides with the cup and the substrate and for preventing the processing liquid having collided with the cup from reaching the surface of the substrate rotated held by the spin chuck.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film of the low surface tension liquid, an opening-forming step of forming an opening in the center region of the liquid film, a liquid film removal step of removing the liquid film from the upper surface of the substrate by widening the opening, a low surface tension liquid supply step of supplying a low surface tension liquid toward a first liquid landing point which is set on the outside of the opening, a hydrophobic agent supply step of supplying a hydrophobic agent toward a second liquid landing point which is set on the outside of the opening and further from the opening than the first liquid landing point, and a liquid landing point moving step of moving the first liquid landing point and the second liquid landing point so as to follow widening of the opening.

Abstract: A substrate processing method includes a liquid film forming step of supplying a low surface tension liquid onto the upper surface of the substrate while rotating the substrate at a first rotational speed, in order to form a liquid film of the low surface tension liquid on the upper surface of the substrate, a rotation decelerating step of decelerating rotation of the substrate to a second rotational speed while continuing the liquid film forming step, after a processing liquid on the substrate has been replaced with the low surface tension liquid, an opening forming step of forming an opening in the center region of the liquid film on the substrate that rotates at the second rotational speed after completion of the liquid film forming step, and a liquid film removing step of removing the liquid film from the upper surface of the substrate by widening the opening.

Abstract: A substrate processing method includes a facing-disposing step of disposing a facing member such that the facing member faces an upper surface of the horizontally held substrate, a space forming step of forming a space where movement of the atmosphere in from and out to an outside is restricted by the horizontally held substrate, the facing member, and a guard that surrounds the horizontally held substrate and the facing member in plan view, an inert gas supplying step of supplying an inert gas to the space, an interval adjusting step of adjusting an interval between the upper surface of the substrate and the facing member by relatively raising/lowering the facing member with respect to the horizontally held substrate while maintaining the space, and a processing liquid supplying step of supplying a processing liquid to the upper surface of the horizontally held substrate after the interval adjusting step.

Abstract: A substrate processing apparatus includes a substrate holder, a rotating mechanism, a processing liquid discharge unit, and a gas discharge unit. The processing liquid discharge unit discharges a liquid flow of a processing liquid such that the liquid flow comes into contact with a landing position in a rotation path of a peripheral portion of an upper surface of the substrate being rotated. The gas discharge unit discharges a first gas flow of an inert gas from above toward a first position upstream from the landing position in a direction of rotation of the substrate in the rotation path, and discharges a second gas flow of the inert gas from above toward a second position upstream from the first position in the direction of rotation of the substrate in the rotation path. The kinetic energy of the second gas flow is lower than the kinetic energy of the first gas flow.

Abstract: A substrate treatment method that includes circulating a treatment liquid from a treatment vessel through a circulation path extending through a filter and a temperature controller, spouting the treatment liquid toward a substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel, and controlling the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position.

Abstract: A nozzle for discharging droplets of a processing liquid for processing a substrate has a main body including a supply port, a drain port, a processing liquid flow passageway connecting the supply port and the drain port, and a plurality of discharge ports from which the processing liquid is discharged. The processing liquid flow passageway includes a plurality of branch flow channels, which branch out between the supply port and the drain port and collect together between the supply port and the drain port. The plurality of discharge ports form a plurality of columns respectively corresponding to the plurality of branch flow channels; and are aligned along and connected to the corresponding branch flow channels. A piezo element applies vibration to the processing liquid flowing through the plurality of branch flow channels.

Abstract: A nozzle for discharging droplets of a processing liquid for processing a substrate has a main body including a supply port, a drain port, a processing liquid flow passageway connecting the supply port and the drain port, and a plurality of discharge ports from which the processing liquid is discharged. The processing liquid flow passageway includes a plurality of branch flow channels, which branch out between the supply port and the drain port and collect together between the supply port and the drain port. The plurality of discharge ports form a plurality of columns respectively corresponding to the plurality of branch flow channels; and are aligned along and connected to the corresponding branch flow channels. A piezo element applies vibration to the processing liquid flowing through the plurality of branch flow channels.

Abstract: A substrate treatment apparatus includes a treatment vessel in which a substrate is accommodated, a treatment liquid supply unit, a chamber enclosing the treatment vessel, a substrate holding unit, a circulation unit and a control unit. The circulation unit circulates the treatment liquid from the treatment vessel through a circulation path extending through a filter and a temperature controller and spouts the treatment liquid toward the substrate accommodated in the treatment vessel to recover the treatment liquid in the treatment vessel. The control unit controls the liquid surface level of the treatment liquid retained in the treatment vessel below the substrate held at a substrate treatment position.