Abstract: Loss in a low-pass filter is reduced. A radio-frequency module includes an antenna terminal, a power amplifier, a low-noise amplifier, and a low-pass filter. The low-pass filter is disposed on a transmit path between the antenna terminal and the power amplifier and on a receive path between the antenna terminal and the low-noise amplifier. The low-pass filter has multiple paths. Each of the paths forms a part of either one or both of the transmit path and the receive path. The paths include a first path and a second path. The second path has a smaller reactance than the first path.

Abstract: A radio-frequency module includes a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit that controls the first switch and the second switch. The first switch, the second switch, and the switch control circuit are included in a semiconductor IC being integrated into a single chip. The power amplifier and the semiconductor IC are mounted on or above the module substrate. When the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is disposed between the first switch and the second switch.

Abstract: A radio-frequency module includes a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit that controls the first switch and the second switch. The first switch, the second switch, and the switch control circuit are included in a semiconductor IC being integrated into a single chip. The power amplifier and the semiconductor IC are mounted on or above the module substrate. When the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is disposed between the first switch and the second switch.

Abstract: An antenna switch of a radio frequency module selectively switches at least between connection between a first connection terminal and a common terminal and connection between a second connection terminal and the common terminal. A first connection terminal receives a signal in a first communication band. A second connection terminal receives a signal in a second communication band. When the second connection terminal and the common terminal are in connection with each other, a variable capacitor (C1, C2) of a filter circuit shifts the attenuation band of the filter circuit to a higher band than that when the first connection terminal and the common terminal are in connection with each other.

Abstract: A radio frequency (RF) front end module is capable of simultaneously transmitting an RF signal of a first communication channel in a communication band (CB) to which communication channels are allocated and an RF signal of a second communication channel of the CB. The module includes a common terminal, a power amplifier to which RF signals of the first and second communication channels are simultaneously input, a multiplexer that has a transmission filter unit and a reception filter unit connected to the common terminal and treating a transmission bandwidth of the CB and a reception bandwidth of the CB, respectively, as a pass band, and a transmission filter arranged between an output terminal of the power amplifier and an input terminal of the transmission filter unit and treating a bandwidth including the transmission bandwidth as a pass band and a bandwidth including the reception bandwidth as an attenuation band.

Abstract: Opposite-side frequency bands are opened in a plurality of carrier aggregations. In a radio frequency module, a variable phase shifter differentiates a phase in a first single mode in which signals of a first frequency band are communicated and a phase in a first carrier aggregation mode and differentiates the phase in the first single mode and a phase in a second carrier aggregation mode. The variable phase shifter makes a phase difference between the phase in the first single mode and the phase in the first carrier aggregation mode different from a phase difference between the phase in the first single mode and the phase in the second carrier aggregation mode.

Abstract: A radio-frequency module includes a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit that controls the first switch and the second switch. The first switch, the second switch, and the switch control circuit are included in a semiconductor IC being integrated into a single chip. The power amplifier and the semiconductor IC are mounted on or above the module substrate. When the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is disposed between the first switch and the second switch.

Abstract: A radio frequency circuit is capable of sending a transmit signal of a first communication band and a transmit signal of a second communication band simultaneously and includes a transmit input terminal, a power amplifier capable of amplifying a transmit signal of the first communication band, and a filter connected between the transmit input terminal and an input terminal of the power amplifier. In the filter, a pass band is a band including a transmit band of the first communication band, and an attenuation band is a band including a transmit band of the second communication band.

Abstract: A radio frequency circuit includes: an amplifier circuit configured to amplify a first radio frequency signal using a first power supply voltage, and amplify a second radio frequency signal using a second power supply voltage. The first radio frequency signal is a signal in a first band for Long Term Evolution (LTE), the second radio frequency signal is a signal in a second band for 5th Generation New Radio (5G NR) or a wireless local area network (WLAN) signal, and in a state in which a first predetermined condition regarding the first radio frequency signal and the second radio frequency signal is satisfied, a value of the second power supply voltage is greater than a value of the first power supply voltage.

Abstract: A radio frequency (RF) front end module is capable of simultaneously transmitting an RF signal of a first communication channel in a communication band (CB) to which communication channels are allocated and an RF signal of a second communication channel of the CB. The module includes a common terminal, a power amplifier to which RF signals of the first and second communication channels are simultaneously input, a multiplexer that has a transmission filter unit and a reception filter unit connected to the common terminal and treating a transmission bandwidth of the CB and a reception bandwidth of the CB, respectively, as a pass band, and a transmission filter arranged between an output terminal of the power amplifier and an input terminal of the transmission filter unit and treating a bandwidth including the transmission bandwidth as a pass band and a bandwidth including the reception bandwidth as an attenuation band.

Abstract: A high-frequency module (1) includes a first substrate (101), a second substrate (102) that faces the first substrate (101), a support (103) that supports the first substrate (101) and the second substrate (102), and a plurality of high-frequency circuit components arranged in internal space formed by the first substrate (101), the second substrate (102), and the support and on both of facing principal faces of the first substrate (101) and the second substrate (102), and the plurality of high-frequency circuit components include a power amplifier element that constitutes a power amplifier circuit (16).

Abstract: Opposite-side frequency bands are opened in a plurality of carrier aggregations. In a radio frequency module, a variable phase shifter differentiates a phase in a first single mode in which signals of a first frequency band are communicated and a phase in a first carrier aggregation mode and differentiates the phase in the first single mode and a phase in a second carrier aggregation mode. The variable phase shifter makes a phase difference between the phase in the first single mode and the phase in the first carrier aggregation mode different from a phase difference between the phase in the first single mode and the phase in the second carrier aggregation mode.

Abstract: A circuit module (100) includes an electronic component (30), a plurality of conductor posts (40), a mold layer (50) that seals a plurality of the electronic components (30) and the plurality of conductor posts (40), and a shield layer (60) on the mold layer (50). The electronic components (30) include a first electronic component (31) and second electronic components (32, 36). The plurality of conductor posts (40) includes a group of conductor posts (400) traversing between the first electronic component (31) and the second electronic components (32, 36). The shield layer (60) includes a slit (600) that, with respect to each conductor post (40) included in the group (400) of conductor posts, in a plan view, passes and extends between the conductor post (40) and the first electronic component (31), or between the conductor post (40) and the second electronic components (32, 36).

Abstract: An antenna switch of a radio frequency module selectively switches at least between connection between a first connection terminal and a common terminal and connection between a second connection terminal and the common terminal. A first connection terminal receives a signal in a first communication band. A second connection terminal receives a signal in a second communication band. When the second connection terminal and the common terminal are in connection with each other, a variable capacitor (C1, C2) of a filter circuit shifts the attenuation band of the filter circuit to a higher band than that when the first connection terminal and the common terminal are in connection with each other.

Abstract: A circuit module (100) includes an electronic component (30), a plurality of conductor posts (40), a mold layer (50) that seals a plurality of the electronic components (30) and the plurality of conductor posts (40), and a shield layer (60) on the mold layer (50). The electronic components (30) include a first electronic component (31) and second electronic components (32, 36). The plurality of conductor posts (40) includes a group of conductor posts (400) traversing between the first electronic component (31) and the second electronic components (32, 36). The shield layer (60) includes a slit (600) that, with respect to each conductor post (40) included in the group (400) of conductor posts, in a plan view, passes and extends between the conductor post (40) and the first electronic component (31), or between the conductor post (40) and the second electronic components (32, 36).

Abstract: A PA module includes a previous stage amplification element to amplify a high-frequency signal, a posterior stage amplification element to amplify the high-frequency signal amplified by the previous stage amplification element, and a variable filter circuit arranged between the previous stage amplification element and the posterior stage amplification element and to vary a pass band and an attenuation band in accordance with a frequency band of the high-frequency signal, in which the variable filter circuit includes a filter portion and switches, the previous stage amplification element, the switches, and the posterior stage amplification element are arranged on a mounting surface of a substrate, the filter portion is stacked and arranged so as to overlap with at least one of the previous stage amplification element, the switches, and the posterior stage amplification element when the substrate is viewed in a plan view.

Abstract: A radio-frequency signal amplifier circuit that is used in a front-end circuit and that propagates a radio-frequency transmission signal and a radio-frequency reception signal is described. The amplifier circuit has an amplifier transistor, a bias circuit, a resistor, and an LC series resonance circuit. The LC series resonant circuit has one end that is connected to a node between the resistor and a signal input terminal, and has another end that is connected to a grounding terminal. A resonant frequency of the LC series resonance circuit is included in a difference frequency band between the frequencies of the transmission signal and the reception signal.

Abstract: A PA module (10A) includes a previous stage amplification element (12) to amplify a high-frequency signal, a posterior stage amplification element (13) to amplify the high-frequency signal amplified by the previous stage amplification element (12), and a variable filter circuit arranged between the previous stage amplification element (12) and the posterior stage amplification element (13) to vary a pass band and an attenuation band in accordance with a frequency band of the high-frequency signal, in which the variable filter circuit includes a filter portion (16) and switches (14 and 15) to vary the pass band and the attenuation band of the variable filter circuit, and the previous stage amplification element (12) and at least a part of the switches (14 and 15) are formed in one chip using a chip A, the posterior stage amplification element (13) are included in a second chip which is different from the chip A.

Abstract: A semiconductor substrate includes emitter electrodes for multiple high-frequency amplifying transistors. An insulating substrate includes multiple land electrodes, ground electrodes, and multiple inductor electrodes. The land electrodes are formed on the front surface or near the front surface of the insulating substrate, and are joined to the respective emitter electrodes. The ground electrodes are formed inside the insulating substrate. Each of the inductor electrodes couples a corresponding one of the land electrodes to any of the ground electrodes in such a manner that the lengths of the coupling to the ground electrodes are individually determined.

Abstract: A high-frequency amplifier module includes a semiconductor substrate and an insulating substrate. The semiconductor substrate includes multiple emitter electrodes, each of which is coupled to the emitter of a corresponding one of high-frequency amplifying transistors. The insulating substrate includes a common ground electrode, ground terminal electrodes, and thickness-direction coupling electrodes. The common ground electrode is formed on or near the front surface of the insulating substrate, and is joined to the emitter electrodes. The ground terminal electrodes are formed on the back surface of the insulating substrate. The thickness-direction coupling electrodes couple the common ground electrode to the ground terminal electrodes.