Patents by Inventor Reiji Nishikawa
Reiji Nishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6562493Abstract: Provided are a battery and a lead member, designed so that high strength of weld between them can be maintained with less variation despite the supply of lower welding current thereto when the lead member is welded to the outer surface of the battery by the parallel resistance welding method, and a battery pack using the same. A layer of an Ni-based alloy, e.g., an Ni—Fe alloy, is formed on a part or the whole of the outer surface of the battery. The lead member for battery connection is composed of a substrate and an Ni—Sn alloy layer formed on that surface of the substrate which is welded to the outer surface of the battery. The battery pack is composed of a battery group that is assembled by using the battery and/or the lead member and stored in a shell.Type: GrantFiled: March 18, 1999Date of Patent: May 13, 2003Assignee: Toshiba Battery Co., Ltd.Inventors: Masazumi Tsukada, Reiji Nishikawa, Hideaki Kitazume, Tsutomu Matsui, Noriyuki Shimizu, Kayo Tanaka, Kaoru Hosobuchi
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Patent number: 6338916Abstract: Provided is a hydrogen absorbing alloy superior to the MmNi5 system hydrogen absorbing alloy and the TiFe system hydrogen absorbing alloy that are widely put to practical use in both the capacity density per unit volume and the capacity density per unit weight. The hydrogen absorbing alloy of the present invention is also superior to the conventional TiMn2 system hydrogen absorbing alloy in the initial activation. The hydrogen absorbing alloy of the present invention is represented by a general formula AMx, where A is at least one element selected from IA group, IIA group, IIIB group, and IVB group of the periodic table, and M is at least one element selected from VB group, VIB group, VIIB group, VIIIB group, IB group, IIB group, IIIA group, IVA group and VA group of the periodic table, x meets the relationship of 2.7<x<3.8, and an average atomic radius r meets the relationship 1.36 Å≦r≦1.39 Å.Type: GrantFiled: February 2, 2000Date of Patent: January 15, 2002Assignee: Toshiba Battery Co., Ltd.Inventors: Shuichiro Irie, Hideharu Suzuki, Reiji Nishikawa, Kazuta Takeno
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Patent number: 5434014Abstract: A thin film type longitudinal magnetic recording medium is manufactured by forming a magnetic layer of Co.sub.1-x-y Pt.sub.x Cr.sub.y, (0.15<x.ltoreq.0.35; 0<y.ltoreq.0.15), on a substrate. The magnetic layer is formed by sputtering under an inert gas atmosphere containing 0.1 to 15% by volume of at least one of N.sub.2 and O.sub.2.Type: GrantFiled: August 27, 1993Date of Patent: July 18, 1995Assignee: Kabushiki Kaisha ToshibaInventors: Masayuki Kanamaru, Takashi Hikosaka, Reiji Nishikawa
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Patent number: 4961979Abstract: Disclosed is an optical recording medium comprising a transparent substrate having a tracking line formed therein, and a recording layer formed on that surface of the substrate in which is formed the tracking line. The recording layer consists of a low oxide of nickel. Also disclosed is an optical recording medium comprising a transparent substrate consisting of a thermoplastic resin, a thermosetting resin layer formed on each surface of the substrate, a patterned photoresist layer, said patterned photoresist layer being formed on one of the thermosetting resin layer, and a recording layer formed to cover the exposed portion of the thermosetting resin layer and the patterned photoresist layer.Type: GrantFiled: April 5, 1989Date of Patent: October 9, 1990Assignee: Kabushiki Kaisha ToshibaInventors: Atsuko Iida, Hirosi Ohdaira, Masaki Katsura, Reiji Nishikawa, Norio Ozawa
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Patent number: 4801481Abstract: A perpendicular magnetic recording floppy disk comprises a flexible plastic film substrate, a first magnetic recording layer formed on one side of the plastic film substrate and having an axis of easy magnetization in a direction perpendicular to the one side of the plastic film substrate, and a second magnetic recording layer formed on the other side of the plastic film substrate and having an axis of easy magnetization in a direction perpendicular to the above-mentioned other side of the plastic film substrate. The second magnetic recording layer has a thickness greater than a thickness of the first magnetic recording layer.Type: GrantFiled: June 17, 1983Date of Patent: January 31, 1989Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Masayuki Sagoi, Reiji Nishikawa
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Patent number: 4680197Abstract: A method of manufacturing a perpendicular magnetic recording floppy disk is disclosed. A first magnetic recording layer is formed by sputtering a perpendicularly magnetizable material on one side of a plastic film substrate. A second magnetic recording layer is formed by sputtering the perpendicularly magnetizable material on the other side of the plastic film substrate after forming the first magnetic recording layer. The second magnetic recording layer has a thickness greater than that of the first magnetic recording layer, when a curl of the first magnetic recording layer on the plastic film substrate, resulting from forming the first magnetic recording layer on the plastic film substrate, is to the outside. On the other hand, the second magnetic recording layer has a thickness lower than that of the first magnetic recording layer, when a curl of the first magnetic recording layer on the plastic film substrate is to the inside.Type: GrantFiled: December 2, 1985Date of Patent: July 14, 1987Assignee: Kabushiki Kaisha ToshibaInventors: Masayuki Sagoi, Reiji Nishikawa
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Patent number: 4652479Abstract: In a magnetic recording disk of a double-sided data recording type according to a perpendicular magnetic recording technique of the invention, recording layers having different film thicknesses are formed on two surfaces of a base layer. The film thickness of one magnetic recording layer is set to be larger than the film thickness of the other magnetic recording layer, thereby preventing a curl phenomenon. In addition, a coercive force of the thicker recording layer is set to be smaller than that of the thinner layer. Thus, differences in a reproduction output voltage and an optimal recording current between the two recording layers of the disk due to a film thickness difference can be compensated for.Type: GrantFiled: March 6, 1985Date of Patent: March 24, 1987Assignee: Kabushiki Kaisha ToshibaInventors: Toshiyuki Suzuki, Reiji Nishikawa
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Patent number: 4649073Abstract: In a magnetic recording disk of a double-sided recording type according to a perpendicular magnetic recording technique of the invention, recording layers having different film thicknesses are formed on two surfaces of a base layer. The film thickness of one magnetic recording layer is set to be larger than the film thickness of the other magnetic recording layer. Thus, a curl phenomenon can be prevented. In addition, a coercive force of the thicker recording layer is set to be higher than that of the thinner recording layer. A difference in a perpendicular recording density between the two recording layers due to a difference in the film thickness thereof can be compensated for.Type: GrantFiled: March 6, 1985Date of Patent: March 10, 1987Assignee: Kabushiki Kaisha ToshibaInventors: Toshiyuki Suzuki, Reiji Nishikawa
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Patent number: 4629660Abstract: A perpendicular magnetic-recording medium wherein an amorphous alloy layer of nickel and phosphorus is formed on a disc substrate; the surface of the alloy layer is smoothed with high precision; and a ferromagnetic Co-based perpendicular magnetic-recording layer is formed on the smoothed surface of the alloy layer.Type: GrantFiled: March 12, 1984Date of Patent: December 16, 1986Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Masayuki Sagoi, Reiji Nishikawa
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Patent number: 4441974Abstract: There is disclosed a magnetron sputtering apparatus including a sputtering chamber, a substrate and target disposed within the sputtering chamber to form a desired space therebetween, device for applying a voltage between the substrate and target, and device for producing a magnetic field; and the apparatus comprises the magnetic field-producing device adapted to excite a magnetic field so that the direction of the magnetic field may be inverted on the magnetic symmetry axis within the space.The magnetron sputtering apparatus of the present invention can form metal films having no crack without heating of the substrate and also form a magnetic recording film layer having an increased coercive force perpendicular to the surface of the film.Type: GrantFiled: April 28, 1983Date of Patent: April 10, 1984Assignees: Tokyo Shibaura Denki Kabushiki Kaisha, Tokuda Seisakusho, Ltd.Inventors: Reiji Nishikawa, Shozo Satoyama, Yoshinori Ito, Hidetaka Jyo
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Patent number: 4410603Abstract: A magnetic recording medium for perpendicular magnetic recording comprises a low coercive force material, and a magnetic recording layer which is formed on the low coercive force layer and has magnetic anisotropy perpendicular to the surface of said low coercive force layer. The magnetic recording layer is of 0.3 .mu.m or less in thickness.Type: GrantFiled: September 22, 1981Date of Patent: October 18, 1983Assignee: Tokyo Shibaura Denki Kabushiki KaishaInventors: Kazuyoshi Yamamori, Reiji Nishikawa, Tatsuo Fujiwara, Toshimitsu Asano