Abstract: A lighting apparatus includes an LED, a diffusion member, and a light shielding member. The diffusion member is disposed so as to at least partially cover the LED and diffuses light emitted from the LED. The light shielding member is disposed so as to at least partially cover the diffusion member and is provided with a plurality of pinholes through which light diffused by the diffusion member is transmitted. In some example embodiments, the light apparatus can be a planetarium apparatus for projecting star images such as constellations or the like.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a transparent resin. The substrate is configured to have an opening portion. The opening portion includes a lower portion and an upper portion narrower than the lower portion. The semiconductor light-emitting element is placed in a central portion of the substrate. The transparent resin covers the semiconductor light-emitting element and is provided to the opening portion.

Abstract: A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range.

Abstract: An illuminating device in which stray lights are prevented and light distribution design is easy by making it possible to receive lights emitted from an LED lamp with an external reflecting mirror as much as possible is provided. A reflecting mirror having a concave reflecting surface reflecting an incident light, a light emitting element, and a lens molding a light emitting element therein and having a lens surface opposed to a light emitting surface of the light emitting element, the lens surface being in a slope shape with its central portion being projected to the light emitting element are included, and the reflecting surface of the reflecting mirror and the light emitting surface of the light emitting element are disposed to be opposed to each other with the lens surface of the lens therebetween so that light emitted from the light emitting element is reflected at the lens surface to be emitted outside the lens to be incident on the reflecting surface of the reflecting mirror.

Abstract: A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range.

Abstract: A light emitting device includes: a mounting member including a recess; a light emitting element provided in the recess and made of a semiconductor; an electrostatic discharge protection element provided in the recess and connected parallel to the light emitting element; and a translucent resin layer mixed with a filler capable of reflecting emitted light from the light emitting element, covering the electrostatic discharge protection element and not covering the light emitting element.

Abstract: A light emitting device includes: a first substrate with an end surface formed by separation on its outer edge; a second substrate including on its upper surface a first electrode and a second electrode, and at its side corner a first extraction electrode connected to the first electrode and a second extraction electrode connected to the second electrode, one end portion of the second electrode being opposed to one end portion of the first electrode, the second substrate being laminated on the first substrate so that an outer edge of the second substrate is located inside the outer edge of the first substrate; a light emitting element bonded to the first electrode; and a third substrate including a first through hole which allows emission of emitted light from the light emitting element, the third substrate being laminated on the second substrate so that an outer edge of the third substrate is located inside the outer edge of the first substrate.

Abstract: A light emitting device includes: a light emitting element; a first lead including a die pad portion at its one end portion, the light emitting element being bonded to the die pad portion; a second lead with its one end portion being opposed to the one end portion of the first lead; and a resin molded body including a recess with at least part of the die pad portion being exposed to the bottom thereof so that emission light from the light emitting element can be emitted upward, a lower surface with at least part of the lower surface of the first lead and at least part of the lower surface of the second lead being exposed thereto, and a lateral surface with at least part of the lateral surface of the die pad portion being exposed thereto, the resin molded body embedding the first lead and the second lead so that the other end portion of the first lead and the other end portion of the second lead are projected in directions opposite to each other.

Abstract: An illuminating device in which stray lights are prevented and light distribution design is easy by making it possible to receive lights emitted from an LED lamp with an external reflecting mirror as much as possible is provided. A reflecting mirror having a concave reflecting surface reflecting an incident light, a light emitting element, and a lens molding a light emitting element therein and having a lens surface opposed to a light emitting surface of the light emitting element, the lens surface being in a slope shape with its central portion being projected to the light emitting element are included, and the reflecting surface of the reflecting mirror and the light emitting surface of the light emitting element are disposed to be opposed to each other with the lens surface of the lens therebetween so that light emitted from the light emitting element is reflected at the lens surface to be emitted outside the lens to be incident on the reflecting surface of the reflecting mirror.

Abstract: In one aspect, a semiconductor laser device may include a supporting member, a semiconductor laser element provided over the supporting member, and configured to emit a laser from a front surface and monitoring laser from a rear surface, and a photo receiving element provided over the supporting member, and configured to receive the monitoring laser from the semiconductor laser element at a photo receiving region, the photo receiving region provided on a side surface of the photo receiving element, wherein the side surface of the photo receiving element has a smaller area than an area of a bottom surface of the photo receiving element.

Abstract: A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside the mold resin. A first lead is provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a first direction, and a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a second direction which is opposite to the first direction. A light emitting element is mounted on the first lead in the cup shape portion, and a wire electrically connects the light emitting element and the second lead. A sealing resin is embedded in the one or more holes and the one or more trenches and is configured to seal the light emitting element and the wire.

Abstract: A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside the mold resin. A first lead is provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a first direction, and a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a second direction which is opposite to the first direction. A light emitting element is mounted on the first lead in the cup shape portion, and a wire electrically connects the light emitting element and the second lead. A sealing resin is embedded in the one or more holes and the one or more trenches and is configured to seal the light emitting element and the wire.

Abstract: A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside the mold resin. A first lead is provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a first direction, and a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a second direction which is opposite to the first direction. A light emitting element is mounted on the first lead in the cup shape portion, and a wire electrically connects the light emitting element and the second lead. A sealing resin is embedded in the one or more holes and the one or more trenches and is configured to seal the light emitting element and the wire.

Abstract: A semiconductor light emitting device may include a first supporting member having a main surface; a semiconductor light emitting element having a light emitting layer and provided on the main surface of the first supporting member, the light emitting layer being substantially parallel to the main surface of the first supporting member; and a second supporting member provided on the main surface of the first supporting member, the second supporting member having a reflective surface and a front opening, the reflective surface being configured to reflect light emitted from the semiconductor light emitting element. A sealing resin is provided in a space surrounded by the first supporting member and the second supporting member and configured to seal the semiconductor light emitting element.

Abstract: A semiconductor light detecting device has a light absorbing layer; and a pn junction, carriers generated by the light absorbing layer absorbing the light in a light detecting region being detected as a photoelectric current through a depletion layer provided by applying a backward voltage to the pn junction, wherein the light detecting region in the light absorbing layer is all depleted in a slate where an operating voltage is applied.

Abstract: A semiconductor light detecting device has a light absorbing layer; and a pn junction, carriers generated by the light absorbing layer absorbing the light in a light detecting region being detected as a photoelectric current through a depletion layer provided by applying a backward voltage to the pn junction, wherein the light detecting region in the light absorbing layer is all depleted in a slate where an operating volt; is applied.

Abstract: The use of pulverized coal as the fuel to be injected into metallurgical or combustion furnace becomes possible enabled by improving the transportability thereof. Further, a pulverized coal is provided, which is inhibiting from bridging or channeling in a hopper, or piping choking. A water-soluble inorganic salt having a polar group is made to adhere to pulverized coal which is prepared from raw coal having an average HGI of 30 or above and which is in a dry state at the injection port of a metallurgical or combustion furnace, The inorganic salt is selected from among BaCl.sub.2, CaCl.sub.2, Ca(NO.sub.2).sub.2, Ca(NO.sub.3).sub.2, Ca(ClO).sub.2, K.sub.2 CO.sub.3, KCl, MgCl.sub.2, MgSO.sub.4, NH.sub.4 BF.sub.4, NH.sub.4 Cl, (NH.sub.4).sub.2 SO.sub.4, Na.sub.2 CO.sub.3, NaCl, NaClO.sub.3, NaNO.sub.2, NaNO.sub.3, NaOH, Na.sub.2 S.sub.2 O.sub.3, Na.sub.2 S.sub.2 O.sub.5, HNO.sub.3, H.sub.2 SO.sub.4, H.sub.2 CO.sub.3, and HCl.

Abstract: A semiconductor light receiving device includes a semiconductor crystal substrate having a principle plane which almost coincides with a crystal face having a low order face orientation index, a light detecting portion, formed on a surface of the semiconductor crystal substrate or inside the semiconductor crystal substrate, for converting incident light into an electric signal, and a light incident region formed on the principle plane of the semiconductor crystal substrate, for guiding light into the light detecting portion. The surface of at least the optical incident region on the principle plane of the semiconductor crystal substrate is an uneven surface constituted by a large number of crystal faces each having a face orientation index having an order higher than that of the crystal face of the semiconductor crystal substrate.

Abstract: An n.sup.- -type InP buffer layer is formed on an n-type InP substrate. An n.sup.- -type InGaAs light absorbing layer is formed on the n.sup.- -type InP buffer layer. An n.sup.- -type InP cap layer is formed on the n.sup.- -type InGaAs light absorbing layer. A p-type InP region is formed in the InP cap layer. A layered electrode having a contact with the p-type InP region comprises a first layer made of an Au layer, a second layer made of a Ti layer or the like, a third layer made of a Pt layer or the like, and a fourth layer made of an Au layer. The first layer made of Au has a thickness of 1 to 500 nm. This structure improves an ohmic ability and a peel strength at a contact portion where an electrode is connected, and simplifies manufacturing steps.

Abstract: The upper surface of a stage has first, second and third surfaces formed in a stepped configuration, the first and second surfaces are connected to each other by a first side surface and the second and third surfaces are connected to each other by a second side surface. A circular arc-form concave portion is formed in the side surface and a chip carrier is disposed on the second surface inside the concave portion. A depressing plate is disposed on the second surface so as to freely slide in a direction perpendicular to the first side surface. The depressing plate is fixed on a clamp member which is connected to a rotor rotatably mounted on the stage. The rotor is biased by means of a spring so as to move the depressing plate towards the concave portion. The depressing plate has a depressing portion which is set in parallel with the first side surface and the position of the chip carrier is determined by the depressing portion of the depressing plate and the internal surface of the concave portion.