Patents by Inventor Reika Ko

Reika Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma etching apparatus and plasma etching method
    Patent number: 9263298
    Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: February 16, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Kazuto Takai, Reika Ko, Nobuyuki Okayama
  • PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD
    Publication number: 20120012556
    Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.
    Type: Application
    Filed: February 26, 2009
    Publication date: January 19, 2012
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Naoki Matsumoto, Kazuto Takai, Reika Ko, Nobuyuki Okayama