Abstract: In the resin film evaluation method and method for manufacturing a semiconductor device applying the resin film evaluation method of the present invention, first, a substrate having a resin film formed on an insulating film with an opening in which the surface of the insulating film is exposed is irradiated with charged energetic particles. Then, the surface potentials of the substrate surface irradiated with charged energetic particles are measured. Based on the measurements, the difference in surface potential between the resin film and the insulating film exposed in the opening is obtained. Based on the difference in surface potential, a physical quantity such as the resin film residue count obtained after a given treatment is predicted. In this way, the degenerated layer formed on the surface of a resin film due to charged energetic particles such as implantation ions can be evaluated in a simple and highly accurate manner.

Abstract: In the resin film evaluation method and method for manufacturing a semiconductor device applying the resin film evaluation method of the present invention, first, a substrate having a resin film formed on an insulating film with an opening in which the surface of the insulating film is exposed is irradiated with charged energetic particles. Then, the surface potentials of the substrate surface irradiated with charged energetic particles are measured. Based on the measurements, the difference in surface potential between the resin film and the insulating film exposed in the opening is obtained. Based on the difference in surface potential, a physical quantity such as the resin film residue count obtained after a given treatment is predicted. In this way, the degenerated layer formed on the surface of a resin film due to charged energetic particles such as implantation ions can be evaluated in a simple and highly accurate manner.