Abstract: Provided is a carbon nanotube (CNT) network which can improve an electrical joint so that a sufficient amount of current flows into a thin film and the amount of current is controlled. A network of CNT or a CNT hybrid material is constructed by distributing, as a node between CNT and CNT in a CNT thin film, a fine particle of an inorganic semiconductor and preferably fine particles of a metal halide, a metal oxide, or a metal sulfide.

Abstract: Provided is a carbon nanotube (CNT) network which can improve an electrical joint so that a sufficient amount of current flows into a thin film and the amount of current is controlled. A network of CNT or a CNT hybrid material is constructed by distributing, as a node between CNT and CNT in a CNT thin film, a fine particle of an inorganic semiconductor and preferably fine particles of a metal halide, a metal oxide, or a metal sulfide.

Abstract: The purpose of the present invention is to provide a carbon nanotube thin film in which carbon nanotubes exist in a uniformly dispersed state, the thickness and light transmittance of the film can be adjusted easily and are uniform, and high electrical conductivity or high semiconductor properties can be achieved. Carbon nanotubes are mixed with an electrically-non-conductive matrix capable of dispersing the carbon nanotubes satisfactorily therein, such as hydroxypropyl cellulose, to prepare a dense ink that is dispersed in a solvent, the ink is prepared into a film having a uniform thickness employing a doctor blade method or a screen printing method, and subsequently the electrically-non-conductive matrix is removed with a solvent or by a photonic curing method or an oxygen plasma treatment. In this manner, a thin film in which the electrical conductivity or semiconductor properties inherent in carbon nanotubes are recovered can be produced.

Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.

Abstract: The present invention encompasses an organic field-effect transistor comprising an n-type organic semiconductor formed of a fullerene derivative having a fluorinated alkyl group which is expressed by the following chemical formula (wherein at least any one of R1, R2 and R3 is a perfluoro alkyl group or a partially-fluorinated semifluoro alkyl group each having a carbon number of 1 to 20), and a field-effect transistor production method comprising forming an organic semiconductor layer using the fullerene derivative by a solution process, and subjecting the organic semiconductor layer to a heat treatment in an atmosphere containing nitrogen or argon or in vacuum to provide enhanced characteristics to the organic semiconductor layer. The present invention makes it possible to form an organic semiconductor layer by a solution process and provide an organic field-effect transistor excellent in electron mobility and on-off ratio and capable of operating even in an ambient air atmosphere.