Patents by Inventor Reiko Kondoh

Reiko Kondoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferromagnetic film
    Patent number: 5484491
    Abstract: Disclosed is a ferromagnetic film consisting of an alloy represented by a formula (M.sub.a T.sub.b).sub.x N.sub.y, wherein M consists of Co and Fe, T is an element selected from the group of transition metals consisting of Ta and Nb, N is nitrogen, a, b, x, and y represent at % and satisfy 85<a<95, 5<b<15, a+b=100, 82<x<97.5, 2.5<y<18, and x+y=100, and the Fe content of M satisfies 2.5.ltoreq.Fe.ltoreq.12.5 at %. This ferromagnetic film has high saturation magnetic flux density, and soft magnetism not to be degraded by high-temperature annealing, and which is suitably applied to a magnetic head.
    Type: Grant
    Filed: January 31, 1994
    Date of Patent: January 16, 1996
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hitoshi Iwasaki, Yuichi Ohsawa, Reiko Kondoh
  • Magneto-resistive head
    Patent number: 5461527
    Abstract: A member having a first and a second magnetic layer are magnetostatically coupled and laminated and the first magnetic layer formed on a magneto-resistive element, for creating the exchange coupling on the magneto-resistive element and the first magnetic layer. The member is formed by sequentially laminating a first ferromagnetic layer magnetized in a sense along the direction of the longitudinal bias of the magneto-resistive element, non-magnetic layer and second ferromagnetic layer magnetized in a direction opposite to the magnetized direction of the first ferromagnetic layer, for example.
    Type: Grant
    Filed: November 14, 1994
    Date of Patent: October 24, 1995
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Junichi Akiyama, Yuichi Ohsawa, Hitoshi Iwasaki, Reiko Kondoh, Kohichi Tateyama, Toshihiko Ohta, Hiroaki Yoda
  • Magnetoresistance sensor magnetically coupled with high-coercive force film at two end regions
    Patent number: 5329413
    Abstract: A magnetoresistance sensor of this invention is designed to detect a magnetic field on the basis of a change in electric resistance of a magnetoresistance layer, and includes a substrate, the magnetoresistance layer, a magnetization stabilizing layer for stabilizing magnetization of the magnetoresistance layer, and an electrical conductive layer formed on the magnetoresistance layer or the magnetization stabilizing layer. The sensor is characterized in that the magnetoresistance layer and the magnetization stabilizing layer are stacked on each other such that the layers are magnetically coupled to each other at their two end regions with an exchange coupling force higher than that at the remaining region. With this arrangement, there is provided a magnetoresistance sensor having high sensitivity, which can apply a desired bias magnetic field to the MR layer while preventing the bias magnetic field from being disturbed by a magnetic field from a magnetic recording medium or the like.
    Type: Grant
    Filed: January 5, 1993
    Date of Patent: July 12, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Reiko Kondoh, Hitoshi Iwasaki, Junichi Akiyama, Yuichi Ohsawa, Toshihiko Ohta
  • Magnetoresistance effect element and magnetoresistance effect sensor
    Patent number: 5304975
    Abstract: A magnetoresistance effect element includes a multilayer obtained by stacking magnetic and nonmagnetic layers to exhibit a magnetoresistance effect, and an reversal assist layer formed on the multilayer to assist reversal of a magnetic moment of the magnetic layer.
    Type: Grant
    Filed: October 22, 1992
    Date of Patent: April 19, 1994
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Yoshiaki Saito, Susumu Hashimoto, Koichiro Inomata, Hitoshi Iwasaki, Reiko Kondoh, Junichi Akiyama, Yuichi Ohsawa, Toshihiko Ohto