Abstract: An etching method includes: providing, to an interior of a chamber, a substrate having a three-layered film formed by stacking a first silicon oxide-based film, a silicon nitride-based film, and a second silicon oxide-based film; and collectively etching the three-layered film using a HF—NH3-based gas in the interior of the chamber while adjusting a gas ratio in each of the first silicon oxide-based film, the silicon nitride-based film, and the second silicon oxide-based film.

Abstract: There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

Abstract: There is provided a gas treatment apparatus for performing gas treatment on a substrate. The gas treatment apparatus includes: a chamber in which the substrate is accommodated; a gas supply mechanism configured to individually supply a fluorine-containing gas and an alkaline gas; and a gas introduction member configured to cause the fluorine-containing gas and the alkaline gas supplied from the gas supply mechanism to merge with each other and introduce a mixed gas in which the fluorine-containing gas and the alkaline gas are mixed into the chamber. A portion of the gas introduction member including a merging point of the fluorine-containing gas and the alkaline gas is made of an aluminum-based material. A resin coating is formed on at least the portion including the merging point.

Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Abstract: There is provided a substrate processing method which is capable of suitably etching a boron-doped silicon. According to the present invention, a wafer W including an SiB layer made of boron-doped silicon is exposed to a fluorine gas and an ammonia gas, and the wafer W mounted on a stage is heated.

Abstract: There is provided an etching method including: a step of disposing a substrate in a chamber, the substrate having a silicon nitride film, a silicon oxide film, a silicon, and a silicon germanium; a step of setting a pressure in the chamber to 1,333 Pa or more; and a step of selectively etching the silicon nitride film with respect to the silicon oxide film, the silicon, and the silicon germanium by supplying a hydrogen fluoride gas into the chamber.

Abstract: There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

Abstract: There is provided a substrate processing method which is capable of suitably etching a boron-doped silicon. According to the present invention, a wafer W including an SiB layer made of boron-doped silicon is exposed to a fluorine gas and an ammonia gas, and the wafer W mounted on a stage is heated.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.

Abstract: A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

Abstract: A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.

Abstract: A processing condition inspection method of a damage recovery process for reforming a film having OH groups generated by damages from a predetermined process by using a processing gas includes preparing a substrate having an OH group containing resin film, measuring an initial film thickness of the OH group containing resin film, performing a damage recovery process on the substrate after measuring the initial film thickness, measuring a film thickness of the OH group containing resin film after the damage recovery process, calculating a film thickness difference of the OH group containing resin film before and after the damage recovery process, and determining whether processing conditions of the damage recovery process are appropriate or inappropriate based on the film thickness difference.