Abstract: A semiconductor device is provided, including: a substrate; a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator; a second stacked portion provided above the first stacked portion and including a plurality of second electrode layers stacked in the first direction via a second insulator; a connection portion provided between the first stacked portion and the second stacked portion, and including a third insulator; a column-shaped portion extending in the first stacked portion, the second stacked portion, and the connection portion in the first direction, and including a semiconductor body and a charge storage portion; and a semiconductor pillar provided between the substrate and the column-shaped portion, and in contact with the substrate and the semiconductor body of the column-shaped portion.

Abstract: A semiconductor device is provided, including: a substrate; a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator; a second stacked portion provided above the first stacked portion and including a plurality of second electrode layers stacked in the first direction via a second insulator; a connection portion provided between the first stacked portion and the second stacked portion, and including a third insulator; a column-shaped portion extending in the first stacked portion, the second stacked portion, and the connection portion in the first direction, and including a semiconductor body and a charge storage portion; and a semiconductor pillar provided between the substrate and the column-shaped portion, and in contact with the substrate and the semiconductor body of the column-shaped portion.

Abstract: According to one embodiment, the stacked body includes a first stacked portion including a plurality of electrode layers, a second stacked portion including a plurality of electrode layers, and being disposed separately from the first stacked portion in the first direction, and a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion and having a dielectric constant higher than a dielectric constant of the insulator. The column-shaped portion includes a first portion provided in the first stacked portion and extending in the first direction of the stacked body, a second portion provided in the second stacked portion and extending in the first direction, and an intermediate portion provided in the connection portion and connected the first portion to the second portion.

Abstract: According to one embodiment, in a semiconductor storage device, a peripheral circuit supplies a first voltage to a second region when supplying a select potential to a region corresponding to the second region, in a second conductive layer. The peripheral circuit supplies a second voltage higher than the first voltage to a first region when supplying a select potential to a region corresponding to the first region, in the second conductive layer.

Abstract: According to one embodiment, the stacked body includes a first stacked portion including a plurality of electrode layers, a second stacked portion including a plurality of electrode layers, and being disposed separately from the first stacked portion in the first direction, and a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion and having a dielectric constant higher than a dielectric constant of the insulator. The column-shaped portion includes a first portion provided in the first stacked portion and extending in the first direction of the stacked body, a second portion provided in the second stacked portion and extending in the first direction, and an intermediate portion provided in the connection portion and connected the first portion to the second portion.

Abstract: According to one embodiment, the stacked body includes a first stacked portion including a plurality of electrode layers, a second stacked portion including a plurality of electrode layers, and being disposed separately from the first stacked portion in the first direction, and a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion and having a dielectric constant higher than a dielectric constant of the insulator. The column-shaped portion includes a first portion provided in the first stacked portion and extending in the first direction of the stacked body, a second portion provided in the second stacked portion and extending in the first direction, and an intermediate portion provided in the connection portion and connected the first portion to the second portion.

Abstract: According to one embodiment, in a semiconductor storage device, a peripheral circuit supplies a first voltage to a second region when supplying a select potential to a region corresponding to the second region, in a second conductive layer. The peripheral circuit supplies a second voltage higher than the first voltage to a first region when supplying a select potential to a region corresponding to the first region, in the second conductive layer.

Abstract: According to one embodiment, the stacked body includes a first stacked portion including a plurality of electrode layers, a second stacked portion including a plurality of electrode layers, and being disposed separately from the first stacked portion in the first direction, and a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion and having a dielectric constant higher than a dielectric constant of the insulator. The column-shaped portion includes a first portion provided in the first stacked portion and extending in the first direction of the stacked body, a second portion provided in the second stacked portion and extending in the first direction, and an intermediate portion provided in the connection portion and connected the first portion to the second portion.

Abstract: A nonvolatile semiconductor memory device comprises: a substrate; a memory cell that is disposed on the substrate and accumulates a charge as data; and a cover layer covering the memory cell. The cover layer has a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a memory cell side.

Abstract: A nonvolatile semiconductor memory device comprises: a substrate; a memory cell that is disposed on the substrate and accumulates a charge as data; and a cover layer covering the memory cell. The cover layer has a structure in which a first silicon nitride layer, an intermediate layer, and a second silicon nitride layer are stacked sequentially from a memory cell side.