Abstract: A substrate is adapted to accommodate a circuit configuration. The novel substrate is stable under alternating loads and it favorably dissipates heat. To this end, the substrate has a fastening zone to be connected to a contact element that is to be provided. The fastening zone is fixed on the carrier substrate with a first section. A second section projects from the plane of the carrier substrate, and the first and the second sections are adapted to be electrically and mechanically connected to the contact element.

Abstract: A semiconductor module and a method for its fabrication are described. The semiconductor module has at least one semiconductor component that is disposed directly on a substrate body. The substrate body has an insulating ceramic provided with a metal layer. At least one connection conductor is joined to the metal layer by welding, in particular laser microwelding.

Abstract: A power semiconductor module includes a plastic housing, a plurality of connection elements for external main connections and control connections, and at least one ceramic substrate which is provided at least on its top side with a structured metalization. The at least one ceramic substrate is fitted with semiconductor components and is inserted into a bottom opening of the plastic housing. The connection elements for the external main connections and control connections are connected by detaching a part of the structured metalization from the at least one ceramic substrate and bending it vertically upward to form a grip tab so that the grip tab can be connected to a connection element through the use of a brazed joint or a welded joint. These measures ensure an excellent stability with regard to fluctuating thermal loads.

Abstract: A substrate is adapted to accommodate a circuit configuration. The novel substrate is stable under alternating loads and it favorably dissipates heat. To this end, the substrate has a fastening zone to be connected to a contact element that is to be provided. The fastening zone is fixed on the carrier substrate with a first section. A second section projects from the plane of the carrier substrate, and the first and the second sections are adapted to be electrically and mechanically connected to the contact element.

Abstract: A semiconductor module and a method for its fabrication are described. The semiconductor module has at least one semiconductor component that is disposed directly on a substrate body. The substrate body has an insulating ceramic provided with a metal layer. At least one connection conductor is joined to the metal layer by welding, in particular laser microwelding.

Abstract: A power semiconductor module includes a plastic housing, a plurality of connection elements for external main connections and control connections, and at least one ceramic substrate which is provided at least on its top side with a structured metalization. The at least one ceramic substrate is fitted with semiconductor components and is inserted into a bottom opening of the plastic housing. The connection elements for the external main connections and control connections are connected by detaching a part of the structured metalization from the at least one ceramic substrate and bending it vertically upward to form a grip tab so that the grip tab can be connected to a connection element through the use of a brazed joint or a welded joint. These measures ensure an excellent stability with regard to fluctuating thermal loads.