Abstract: In a method of producing an integrated circuit (1, 91, 131) for a transponder (2, 112) a photoresist layer (11) is applied on a first surface (8) of a semiconductor device (3). A patterned mask (14, 94) is generated by lithographically patterning the photoresist layer (11), so that the photoresist layer (11) comprises at least one first via (12, 13). The patterned mask (14, 94) comprises a second surface (17) facing away from the first surface (8). The first via (12, 13) is filled with a first bump (15, 16) by depositing the first bump (12, 13) on the first surface (8). A conductive structure (18, 19, 98, 99, 132) is formed on the second surface (17) of the patterned mask (14, 94). The conductive structure (18, 19, 98, 99, 132) is electrically connected to the first bump (15, 16).

Abstract: In a method of producing a transponder (1) an integrated circuit (2, 72, 82) is produced. The integrated circuit (2, 72, 82) is produced by applying a photoresist layer (11) on a surface (8) of a semiconductor device (4), generating a patterned mask (14) by lithographically patterning the photoresist layer (11) so that the photoresist layer (11) comprises at least one aperture (12, 13), and filling the aperture (12, 13) with a bump (15, 16, 75, 76) by depositing the bump (15, 16, 75, 76) on the surface (8) utilizing the patterned mask (14). Finally, the integrated circuit (2, 72, 82), with the patterned mask (14), is attached to a substrate (3), which comprises an antenna structure (18). The bump (15, 16, 75, 76) is connected electrically to the antenna structure (18).

Abstract: In a method of producing a transponder (1) an integrated circuit (2, 72, 82) is produced. The integrated circuit (2, 72, 82) is produced by applying a photoresist layer (11) on a surface (8) of a semiconductor device (4), generating a patterned mask (14) by lithographically patterning the photoresist layer (11) so that the photoresist layer (11) comprises at least one aperture (12, 13), and filling the aperture (12, 13) with a bump (15, 16, 75, 76) by depositing the bump (15, 16, 75, 76) on the surface (8) utilizing the patterned mask (14). Finally, the integrated circuit (2, 72, 82), with the patterned mask (14), is attached to a substrate (3), which comprises an antenna structure (18). The bump (15, 16, 75, 76) is connected electrically to the antenna structure (18).

Abstract: In a method of producing an integrated circuit (1, 91, 131) for a transponder (2, 112) a photoresist layer (11) is applied on a first surface (8) of a semiconductor device (3). A patterned mask (14, 94) is generated by lithographically patterning the photoresist layer (11), so that the photoresist layer (11) comprises at least one first via (12, 13). The patterned mask (14, 94) comprises a second surface (17) facing away from the first surface (8). The first via (12, 13) is filled with a first bump (15, 16) by depositing the first bump (12, 13) on the first surface (8). A conductive structure (18, 19, 98, 99, 132) is formed on the second surface (17) of the patterned mask (14, 94). The conductive structure (18, 19, 98, 99, 132) is electrically connected to the first bump (15, 16).