Patents by Inventor Reiner Maria Jungblut
Reiner Maria Jungblut has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220260925Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: May 6, 2022Publication date: August 18, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Patent number: 11347150Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: GrantFiled: March 10, 2021Date of Patent: May 31, 2022Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Bart Peter Bert Segers, Everhardus Cornelis Mos, Emil Peter Schmitt-Weaver, Yichen Zhang, Petrus Gerardus Van Rhee, Xing Lan Liu, Maria Kilitziraki, Reiner Maria Jungblut, Hyunwoo Yu
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Patent number: 11126093Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.Type: GrantFiled: May 17, 2017Date of Patent: September 21, 2021Assignee: ASML Netherlands B.V.Inventors: Richard Johannes Franciscus Van Haren, Reiner Maria Jungblut, Leon Paul Van Dijk, Willem Seine Christian Roelofs, Wim Tjibbo Tel, Stefan Hunsche, Maurits Van Der Schaar
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Publication number: 20210215622Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.Type: ApplicationFiled: March 8, 2021Publication date: July 15, 2021Applicant: ASML Netherlands B.V.Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
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Publication number: 20210191278Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: March 10, 2021Publication date: June 24, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Patent number: 10996176Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.Type: GrantFiled: June 18, 2020Date of Patent: May 4, 2021Assignee: ASML Netherlands B.V.Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
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Patent number: 10990018Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: GrantFiled: February 12, 2018Date of Patent: April 27, 2021Assignee: ASML Netherlands B.V.Inventors: Wim Tjibbo Tel, Bart Peter Bert Segers, Everhardus Cornelis Mos, Emil Peter Schmitt-Weaver, Yichen Zhang, Petrus Gerardus Van Rhee, Xing Lan Liu, Maria Kilitziraki, Reiner Maria Jungblut, Hyunwoo Yu
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Publication number: 20200319118Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.Type: ApplicationFiled: June 18, 2020Publication date: October 8, 2020Applicant: ASML Netherlands B.V.Inventors: Wouter Lodewijk ELINGS, Franciscus Bernardus Maria VAN BILSEN, Christianus Gerardus Maria DE MOL, Everhardus Cornelis MOS, Hoite Pieter Theodoor TOLSMA, Peter TEN BERGE, Paul Jacques VAN WIJNEN, Leonard us Henricus Marie VERSTAPPEN, Gerald DICKER, Reiner Maria JUNGBLUT, Chung-Hsun LI
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Publication number: 20200310242Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.Type: ApplicationFiled: May 17, 2017Publication date: October 1, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Richard Johannes Franciscus VAN HAREN, Reiner Maria JUNGBLUT, Leon Paul VAN DIJK, Willem Seine Christian ROELOFS, Wim Tjibbo TEL, Stefan HUNSCHE, Maurits VAN DER SCHAAR
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Patent number: 10746668Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.Type: GrantFiled: April 10, 2019Date of Patent: August 18, 2020Assignee: ASML Netherlands B.V.Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
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Patent number: 10558130Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.Type: GrantFiled: March 14, 2019Date of Patent: February 11, 2020Assignee: ASNL Netherlands B.V.Inventors: Rene Marinus Gerardus Johan Queens, Erik Johan Koop, Reiner Maria Jungblut
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Patent number: 10545410Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.Type: GrantFiled: February 7, 2017Date of Patent: January 28, 2020Assignee: ASML Netherlands B.V.Inventors: Hakki Ergun Cekli, Masashi Ishibashi, Leon Paul Van Dijk, Richard Johannes Franciscus Van Haren, Xing Lan Liu, Reiner Maria Jungblut, Cedric Marc Affentauschegg, Ronald Henricus Johannes Otten
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Publication number: 20190361358Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.Type: ApplicationFiled: February 12, 2018Publication date: November 28, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Bart Peter Bert SEGERS, Everhardus Cornelis MOS, Emil Peter SCHMITT-WEAVER, Yichen ZHANG, Petrus Gerardus VAN RHEE, Xing Lan LIU, Maria I KILITZIRAKI, Reiner Maria JUNGBLUT, Hyunwoo YU
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Publication number: 20190301850Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.Type: ApplicationFiled: April 10, 2019Publication date: October 3, 2019Applicant: ASML Netherlands B.V.Inventors: Wouter Lodewijk ELINGS, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
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Publication number: 20190212664Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.Type: ApplicationFiled: March 14, 2019Publication date: July 11, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Rene Marinus Gerardus Johan Queens, Erik Johan Koop, Reiner Maria Jungblut
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Patent number: 10324379Abstract: A method to form on a substrate a first target comprising a first feature and a second target comprising a second feature, wherein the forming of the targets comprises applying the first feature and the second feature to the substrate by projection of a radiation beam through a production patterning device installed in a lithographic apparatus, the features corresponding to one or more features of the patterning device, and controlling a configuration of the lithographic apparatus to induce an aberration component, such that the first feature is applied to the substrate using a first value of an induced aberration component and the second feature is applied to the substrate using a second, different value of the induced aberration component; measuring a property of the targets; and using the measurements to determine a sensitivity of the property of the targets to changes in value of the induced aberration component.Type: GrantFiled: June 7, 2016Date of Patent: June 18, 2019Assignee: ASML Netherlands B.V.Inventors: Cedric Marc Affentauschegg, Milenko Jovanovic, Richard Johannes Franciscus Van Haren, Reiner Maria Jungblut, Robertus Wilhelmus Van Der Heijden
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Patent number: 10317191Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced 2506 defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used 2508 to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked 2510 to at least partially recompose the measurement results according to the sample plan.Type: GrantFiled: February 14, 2017Date of Patent: June 11, 2019Assignee: ASML Netherlands B.V.Inventors: Wouter Lodewijk Elings, Franciscus Bernardus Maria Van Bilsen, Christianus Gerardus Maria De Mol, Everhardus Cornelis Mos, Hoite Pieter Theodoor Tolsma, Peter Ten Berge, Paul Jacques Van Wijnen, Leonardus Henricus Marie Verstappen, Gerald Dicker, Reiner Maria Jungblut, Chung-Hsun Li
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Patent number: 10274849Abstract: A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.Type: GrantFiled: July 5, 2016Date of Patent: April 30, 2019Assignee: ASML Netherlands B.V.Inventors: Rene Marinus Gerardus Johan Queens, Erik Johan Koop, Reiner Maria Jungblut
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Publication number: 20190079411Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.Type: ApplicationFiled: February 7, 2017Publication date: March 14, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Hakki Ergun CEKLI, Masashi ISHIBASHI, Leon Paul VAN DIJK, Richard Johannes Franciscus VAN HAREN, Xing Lan LIU, Reiner Maria JUNGBLUT, Cedric Marc AFFENTAUSCHEGG, Ronald Henricus Johannes OTTEN
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Patent number: 10133191Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.Type: GrantFiled: July 15, 2015Date of Patent: November 20, 2018Assignee: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo Tel, Frank Staals, Paul Christiaan Hinnen, Reiner Maria Jungblut