Patents by Inventor Reiner Schwab
Reiner Schwab has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10527668Abstract: An apparatus for predicting a future state of an electronic component is provided. The apparatus includes a measuring unit configured to measure a waveform of a signal related to the electronic component. Further, the apparatus includes a processing unit configured to calculate a predicted value of a characteristic of the electronic component based on a reliability model of the electronic component using the waveform of the signal.Type: GrantFiled: June 21, 2016Date of Patent: January 7, 2020Assignee: Intel IP CorporationInventors: Leonhard Heiss, Andreas Lachmann, Reiner Schwab
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Publication number: 20180231601Abstract: An apparatus for predicting a future state of an electronic component is provided. The apparatus includes a measuring unit configured to measure a waveform of a signal related to the electronic component. Further, the apparatus includes a processing unit configured to calculate a predicted value of a characteristic of the electronic component based on a reliability model of the electronic component using the waveform of the signal.Type: ApplicationFiled: June 21, 2016Publication date: August 16, 2018Inventors: Leonhard Heiss, Andreas Lachmann, Reiner Schwab
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Patent number: 9595835Abstract: A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: GrantFiled: September 30, 2013Date of Patent: March 14, 2017Assignee: Infineon Technologies AGInventors: Karl-Heinz Allers, Reiner Schwab
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Publication number: 20140028269Abstract: A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: ApplicationFiled: September 30, 2013Publication date: January 30, 2014Applicant: INFINEON TECHNOLOGIES AGInventors: Karl-Heinz Allers, Reiner Schwab
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Patent number: 8547070Abstract: A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: GrantFiled: November 23, 2009Date of Patent: October 1, 2013Assignee: Infineon Technologies AGInventors: Karl-Heinz Allers, Reiner Schwab
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Publication number: 20100066313Abstract: A method for manufacturing and operating a semiconductor device is disclosed. The semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: ApplicationFiled: November 23, 2009Publication date: March 18, 2010Inventors: Karl-Heinz Allers, Reiner Schwab
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Patent number: 7626222Abstract: A semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: GrantFiled: April 21, 2006Date of Patent: December 1, 2009Assignee: Infineon Technologies AGInventors: Karl-Heinz Allers, Reiner Schwab
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Patent number: 7342314Abstract: The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having an auxiliary structure side edge, wherein the useful structure side edge is opposite to the auxiliary structure side edge separated by a distance, and wherein the auxiliary structure useful structure distance is dimensioned such that a form of the useful structure side edge or a form of the substrate next to the useful structure side edge differs from a form in a device where there is no auxiliary structure.Type: GrantFiled: June 10, 2004Date of Patent: March 11, 2008Assignee: Infineon Technologies AGInventors: Jens Bachmann, Klaus Goller, Dirk Grueneberg, Reiner Schwab
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Publication number: 20060258088Abstract: A semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.Type: ApplicationFiled: April 21, 2006Publication date: November 16, 2006Inventors: Karl-Heinz Allers, Reiner Schwab
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Publication number: 20050017328Abstract: The present invention provides a device having a useful structure which is arranged on a substrate and has a useful structure side edge. In addition, an auxiliary structure is arranged on the substrate adjacent to the useful structure, the auxiliary structure having an auxiliary structure side edge, wherein the useful structure side edge is opposite to the auxiliary structure side edge separated by a distance, and wherein the auxiliary structure useful structure distance is dimensioned such that a form of the useful structure side edge or a form of the substrate next to the useful structure side edge differs from a form in a device where there is no auxiliary structure.Type: ApplicationFiled: June 10, 2004Publication date: January 27, 2005Applicant: Infineon Technologies AGInventors: Jens Bachmann, Klaus Goller, Dirk Grueneberg, Reiner Schwab
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Patent number: 6605949Abstract: In a quasi-hemispherical Fabry-Perot resonator for the non-destructive determination of the surface resistance Rs of electrically conductive thin material films, spherical and planar mirrors are disposed opposite each other in a double shielded cooled resonator space structure supported on individual base plates and the planar mirror, on which a wafer with the thin material film is supported, is mounted on a support arm which extends through the double shield structure. Shield sections through which the support arm extends are supported on pivot arms which are pivotally mounted in the center of the base plates and the shield sections are engaged by the support arm so that they move along with the support arm when the support arm is moved sidewardly for a positioning change of the planar mirror thereby preventing radiation leakage from the resonator space.Type: GrantFiled: January 5, 2001Date of Patent: August 12, 2003Assignee: Forschungszentrum Karlsruhe GmbHInventors: Roland Heidinger, Reiner Schwab, Jakob Burbach, Jürgen Halbritter
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Publication number: 20010008378Abstract: In a quasi-hemispherical Fabri-Perot resonator for the non-destructive determination of the surface resistance Rs of electrically conductive thin material films, spherical and planar mirros are disposed opposite each other in a double shielded cooled resonator space structure supported on individual base plates and the planar mirror, on which a wafer with the thin material film is supported, is mounted on a support arm which extends through the double shield structure. Shield sections through which the support arm extends are supported on pivot arms which are pivotally mounted in the center of the base plates and the shield sections are engaged by the support arm so that they move along with the support arm when the support arm is moved sidewardly for a positioning change of the planar mirror thereby preventing radiation leakage from the resonator space.Type: ApplicationFiled: January 5, 2001Publication date: July 19, 2001Inventors: Roland Heidinger, Reiner Schwab, Jakob Burbach, Jorgen Halbritter