Abstract: Monolithically integrated waveguide-photodiode-FET combination comprising waveguide layer (2), photodiode layer (3), FET layer (4) and a common cover layer (5) applied on a carrier substrate (1) of III-V semiconductor material, having butt coupling between waveguide layer (2) and photodiode layer (3), having introduced dopings for fashioning photodiodes and FETs and having a parting region (19) for the limitation of photodiodes and FETs.

Abstract: Transmitting/receiving device with a diode and an optical fiber optically coupled to an optical window of the diode, where the diode is positioned on a support with a lead-in for inserting the optical fiber. For such a transmitting/receiving device the optical fiber of the diode can be easily and accurately adjusted and subsequently permanently positioned. The invention makes provisions for a cone-shaped lead-in with the diode located at the larger opening of the lead-in. This results in an especially easy adjustment of the optical fiber with respect to the diode. The device can be used in opto-electronic receivers having a so-called "pigtail" connection.

Abstract: A monolithically integrated opto-electronic semiconductor component characterized by a semiconductor substrate having a first surface and a second surface extending parallel to each other, a strip waveguide being applied to the first surface to conduct radiation, such as light, in a path parallel to the first surface, a coupling element for coupling radiation from the strip waveguide through the substrate to a region on the second surface, a photodetector being applied to the second surface at the region for receiving the light which has been coupled laterally from the strip waveguide through the substrate. Preferably, the coupling means comprises a V-shaped groove having slanting surfavces forming a mirror which reflects the light substantially at right angles to the path in the strip waveguide.

Abstract: An integrated structure for bi-directional optical fiber transmission has a laser diode, a photodetector, and a bi-directional optical waveguide integrated on a common substrate, the waveguide guiding radiation from the laser diode out of the structure and directing incoming radiation of a different wavelength through the structure to the photodetector. The structure also includes a passive optical component cooperating with the strip waveguide for substantially isolating the radiation propagated in one direction in the waveguide from the laser diode, and substantially isolating the radiation propagated in the opposite direction in the waveguide from the photodetector. A method for manufacturing this structure includes essentially growing two epitaxial multi-layer structures spaced from each other and covering selected portions of the substrate constituting the laser diode and the photodetector, with the strip waveguide extending therebetween.

Abstract: In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the epitaxial layers is employed as a selectively etchable mask for generating a pn junction of the diode.