Abstract: Hydrogenated amorphous silicon-containing colloids or composite colloids have a silicon-containing shell which surrounds the hollow colloids or composite colloids. The colloids have a spherical geometry. The silicon-containing composite colloids have a spherical geometry and a diameter of between 2 nm and 7 nm in scanning electron micrographs, and the silicon-containing colloids have a spherical geometry with a cavity and a diameter of between 50 and 200 nm in scanning transmission electron micrographs. The cavity is surrounded by a shell with a thickness of between 3 and 10 nm.

Abstract: Hydrogenated amorphous silicon-containing colloids or composite colloids have a silicon-containing shell which surrounds the hollow colloids or composite colloids. The colloids have a spherical geometry. The silicon-containing composite colloids have a spherical geometry and a diameter of between 2 nm and 7 nm in scanning electron micrographs, and the silicon-containing colloids have a spherical geometry with a cavity and a diameter of between 50 and 200 nm in scanning transmission electron micrographs. The cavity is surrounded by a shell with a thickness of between 3 and 10 nm.

Abstract: A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.

Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an n-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: The present invention relates to a method for the hydrogen passivation of semiconductor layers, wherein the passivation is effected by using an arc plasma source, to the passivated semiconductor layers produced according to the method, and to the use thereof.

Abstract: A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode with a substrate support for holding a substrate, wherein a high-frequency alternating field for generating the plasma can be formed between the RF electrode and the counter-electrode. The chamber comprising an RF electrode with an optical feedthrough. A method, for in situ analysis or in situ processing of a layer or plasma in a plasma chamber, wherein the layer is disposed on counter-electrode and an RF electrode is: disposed on the side lacing the layer. Selection of an RF electrode having an optical feedthrough, and at least one step in which electromagnetic radiation is supplied through the optical feedthrough for purposes of analysis or processing of the layer or the plasma, and by at least one other step in which the scattered or emitted or reflected radiation is supplied to an analysis unit.

Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an p-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.

Abstract: The invention relates to a method for production of a thin-layer solar cell with microcrystalline silicon and a layer sequence. According to the invention, a microcrystalline silicon layer is applied to the lower p- or n-layer in pin or nip thin-layer solar cells, by means of a HWCVD method before the application of the microcrystalline i-layer. The efficiency of the solar cell is hence increased by up to 0.8% absolute.