Abstract: An actuating circuit having a primary-side circuit part with an actuating logic circuit and a primary-side reference potential, and four secondary-side circuit parts each having one driver stage designed for actuating a phase of a three-level inverter and a first to fourth semiconductor switch, wherein each semiconductor switch and the secondary-side circuit part assigned thereto has a respective first to fourth secondary-side reference potential, and wherein in each case a level shifter connects the primary-side circuit part to the respective secondary-side circuit part and thus is assigned in each case to both circuit parts. In this connection, the primary-side reference potential corresponds to the first secondary-side reference potential. Furthermore, at least the actuating logic circuit, the first and second level shifters and the first and second driver stages are monolithically integrated.

Abstract: An actuating circuit having a primary-side circuit part with an actuating logic circuit and a primary-side reference potential, and four secondary-side circuit parts each having one driver stage designed for actuating a phase of a three-level inverter and a first to fourth semiconductor switch, wherein each semiconductor switch and the secondary-side circuit part assigned thereto has a respective first to fourth secondary-side reference potential, and wherein in each case a level shifter connects the primary-side circuit part to the respective secondary-side circuit part and thus is assigned in each case to both circuit parts. In this connection, the primary-side reference potential corresponds to the first secondary-side reference potential. Furthermore, at least the actuating logic circuit, the first and second level shifters and the first and second driver stages are monolithically integrated.

Abstract: A drive circuit with a circuit for transmitting a signal from a primary side having a first ground to a secondary side having a second ground. The transformer has capacitive coupling between the primary and secondary sides. The transformer has an ON transmission branch and an OFF transmission branch, which each have a first partial branch and a second partial branch. Capacitive coupling between the primary and secondary sides is effected in each partial branch by high-voltage capacitors. In the inventive method, in each transmission branch, the signal generates a current flow through a first HV capacitor of a first partial branch and an inverse current flow through a second HV capacitor of a second partial branch. This respective current flow is detected on the secondary side and is supplied to an evaluation circuit common to the two partial branches and reconstructs the primary-side input signal on the secondary side.

Abstract: A drive circuit with a circuit for transmitting a signal from a primary side having a first ground to a secondary side having a second ground. The transformer has capacitive coupling between the primary and secondary sides. The transformer has an ON transmission branch and an OFF transmission branch, which each have a first partial branch and a second partial branch. Capacitive coupling between the primary and secondary sides is effected in each partial branch by high-voltage capacitors. In the inventive method, in each transmission branch, the signal generates a current flow through a first HV capacitor of a first partial branch and an inverse current flow through a second HV capacitor of a second partial branch. This respective current flow is detected on the secondary side and is supplied to an evaluation circuit common to the two partial branches and reconstructs the primary-side input signal on the secondary side.

Abstract: A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

Abstract: A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

Abstract: A TOP level switch for use in a drive circuit in power-electronic systems having a half-bridge circuit formed by two power switches, a first so-called TOP switch and a second so-called BOT switch, which are arranged connected in series. The TOP level shifter transmits an input signal from drive logic to a TOP driver. In this case, the TOP level shifter is designed as an arrangement of an UP and a DOWN level shifter path, as well as a downstream signal evaluation circuit. In the associated method for transmission of this input signal, the signal evaluation circuit passes an output signal to the TOP driver when either the UP or the DOWN, or both, level shifter paths emit a signal to the respectively associated input of the signal evaluation circuit.

Abstract: A drive circuit in power electronic systems comprising a half-bridge circuit of two power switches, a first so-called TOP switch and a second so-called BOT switch, which are arranged in a series circuit. The drive circuit has a BOT level shifter for transmitting an input signal from a drive logic to a BOT driver. The BOT level shifter is formed as an arrangement of an UP and a DOWN level shifter branch and a signal evaluation circuit connected downstream thereof. In the inventive method for transmitting the input signal, the signal evaluation circuit transfers an output signal to the BOT driver at least one of the UP and DOWN level shifter branches outputs a signal to the respectively assigned input of the signal evaluation circuit.

Abstract: A TOP level switch for use in a drive circuit in power-electronic systems having a half-bridge circuit formed by two power switches, a first so-called TOP switch and a second so-called BOT switch, which are arranged connected in series. The TOP level shifter transmits an input signal from drive logic to a TOP driver. In this case, the TOP level shifter is designed as an arrangement of an UP and a DOWN level shifter path, as well as a downstream signal evaluation circuit. In the associated method for transmission of this input signal, the signal evaluation circuit passes an output signal to the TOP driver when either the UP or the DOWN, or both, level shifter paths emit a signal to the respectively associated input of the signal evaluation circuit.

Abstract: An integrated circuit configuration is provided comprising a primary side and a secondary side, for actuating power switches disposed in bridge circuit topology as well as an associated method. The primary side comprises a signal processing means and a level shifter for the potential-free actuation of the secondary side. The secondary side, in turn, comprises a signal processing means as well as a driver stage for the TOP switch. For the detection of the switched state of the TOP switch on the primary side, this side comprises a circuit section for the detection and interpretation of a current flow through a level shifter. A first lower threshold value of this current through the level shifter detected on the primary side is assigned to the not-switched-on TOP switch of the bridge circuit, and a second upper threshold value of this current through the level shifter detected on the primary side is assigned to the switched-on TOP switch of the bridge circuit.

Abstract: A drive circuit in power electronic systems comprising a half-bridge circuit of two power switches, a first so-called TOP switch and a second so-called BOT switch, which are arranged in a series circuit. The drive circuit has a BOT level shifter for transmitting an input signal from a drive logic to a BOT driver. The BOT level shifter is formed as an arrangement of an UP and a DOWN level shifter branch and a signal evaluation circuit connected downstream thereof. In the inventive method for transmitting the input signal, the signal evaluation circuit transfers an output signal to the BOT driver at least one of the UP and DOWN level shifter branches outputs a signal to the respectively assigned input of the signal evaluation circuit.

Abstract: The invention relates to an integrated circuit configuration proposed for the actuation of power switches disposed in bridge connection and an associated method. The primary side of this circuit configuration is herein connected with the secondary side, which actuates the TOP switch, via a level shifter. The circuit configuration comprises furthermore between the primary side and a secondary side a diode for error status conveyance from the secondary side to the primary side. The anode-side terminal of the diode is connected with the primary side and its cathode-side terminal with the secondary side of the driver circuit. The primary side applies a voltage to this diode. In the presence of error-free operation the secondary side applies level “high” (Vd) to the cathode of the diode and, in the presence of faulty operation, level “low” (Vg).

Abstract: An integrated circuit configuration is provided comprising a primary side and a secondary side, for actuating power switches disposed in bridge circuit topology as well as an associated method. The primary side comprises a signal processing means and a level shifter for the potential-free actuation of the secondary side. The secondary side, in turn, comprises a signal processing means as well as a driver stage for the TOP switch. For the detection of the switched state of the TOP switch on the primary side, this side comprises a circuit section for the detection and interpretation of a current flow through a level shifter. A first lower threshold value of this current through the level shifter detected on the primary side is assigned to the not-switched-on TOP switch of the bridge circuit, and a second upper threshold value of this current through the level shifter detected on the primary side is assigned to the switched-on TOP switch of the bridge circuit.

Abstract: The invention relates to an integrated circuit configuration proposed for the actuation of power switches disposed in bridge connection and an associated method. The primary side of this circuit configuration is herein connected with the secondary side, which actuates the TOP switch, via a level shifter. The circuit configuration comprises furthermore between the primary side and a secondary side a diode for error status conveyance from the secondary side to the primary side. The anode-side terminal of the diode is connected with the primary side and its cathode-side terminal with the secondary side of the driver circuit. The primary side applies a voltage to this diode. In the presence of error-free operation the secondary side applies level “high” (Vd) to the cathode of the diode and, in the presence of faulty operation, level “low” (Vg).

Abstract: Presented is an integrated circuit configuration for triggering single power semiconductor switches, or power semiconductor switches in half-bridge configuration. The circuit configuration consists of a first integrated trigger chip having a plurality of function groups comprising at least one first level shifter for a switch at higher potential and at least one second integrated trigger chip having a plurality of function groups comprising at least one second level shifter and a driver for this switch. The at least one trigger chip is connected downstream of the first trigger chip, the ground potential of the second trigger chip is at the output potential of the level shifter of the first trigger chip, and the trigger chips are arranged in a common housing with suitable isolation of the trigger chips against each other.

Abstract: A semiconductor component has interface functions between the controller and the power components of power converters, suitable for gating semiconductor switches. In particular, the semiconductor component serves to gate IGBT and MOSFET power switches in low and medium performance three-phase bridge circuits and integrates signal processing (12), level conversion (16) and amplification (gate driver) (17), error recognition, such as short-circuit monitoring by means of VCE detection (19) and operating voltage monitoring (21) as well as error processing (15) for several power semiconductor switches. The advantages of this gating IC in comparison with hybrid or discrete solutions consist of the high integration density of various digital, analogue and driver functions which result in a reduction in the number of discrete components, which means a lower failure rate of the system and lower costs. Another important consideration is the improvement of switching characteristics thanks to monolithic integration.

Abstract: A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.

Abstract: A semiconductor component performing interface functions between the controller and the power components of a power inverter, is designed for the control of semiconductor components, in particular for the control of IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal Oxide Semiconductor Field Effect Transistor) power switches in different circuit topologies for intermediate and high power capacity. The component carries a monolithically integrated circuit performing the functions of signal processing (12), level transformation (13, 14), gate driver amplification, generation and monitoring of operating voltages, short-circuit monitoring by means of collector-emitter voltage detection, as well as the processing, storing and transmission of error signals for a power semiconductor switch.

Abstract: A semiconductor component has interface functions between the controller and the power components of power converters, suitable for gating semiconductor switches. In particular, the semiconductor component serves to gate IGBT and MOSFET power switches in low and medium performance three-phase bridge circuits and integrates signal processing (12), level conversion (16) and amplification (gate driver) (17), error recognition, such as short-circuit monitoring by means of VCE detection (19) and operating voltage monitoring (21) as well as error processing (15) for several power semiconductor switches. The advantages of this gating IC in comparison with hybrid or discrete solutions consist of the high integration density of various digital, analogue and driver functions which result in a reduction in the number of discrete components, which means a lower failure rate of the system and lower costs. Another important consideration is the improvement of switching characteristics thanks to monolithic integration.

Abstract: An IGBT includes two trenches extending from an emitter terminal toward a first side of a substrate of a first conductivity material. A collector layer of a second conductivity material is disposed on a second side of the substrate. The trenches each have a gate and a insulator within them. On the outside of the trenches, bulk regions of a second conductivity type are disposed on the first side of the substrate. On top of the bulk regions are bulk connection regions of a second conductivity type and source regions of a first conductivity type. The emitter couples the bulk and source regions. A material of either conductivity type, an insulator, or two MOSFETS are placed between the trenches. With multiple IGBTs, the trenches can be arranged in striped, island-like, or lattice format.