Abstract: The invention relates to an apparatus and a method for evaluating spectral properties of a measurement object. It comprises a plurality of light emission units, each emitting light with a predetermined emission spectrum and having a respective output configured for emitting the light with the predetermined emission spectrum onto the measurement object, an optical spectrograph having an input port adapted to receive light from the measurement object and a diffraction unit adapted to distribute different wavelengths of the received light to different output ports comprising the optical detectors, wherein the diffraction unit is adapted to distribute said received light to the respective output ports such that the lights in the respective output port have different wavelengths at different diffraction orders; a signal identification unit adapted to identify which of the light emission units contribute to the respective light in the respective output ports.

Abstract: The invention relates to an apparatus and a method for evaluating spectral properties of a measurement object. It comprises a plurality of light emission units, each emitting light with a predetermined emission spectrum and having a respective output configured for emitting the light with the predetermined emission spectrum onto the measurement object, an optical spectrograph having an input port adapted to receive light from the measurement object and a diffraction unit adapted to distribute different wavelengths of the received light to different output ports comprising the optical detectors, wherein the diffraction unit is adapted to distribute said received light to the respective output ports such that the lights in the respective output port have different wavelengths at different diffraction orders; a signal identification unit adapted to identify which of the light emission units contribute to the respective light in the respective output ports.

Abstract: Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 ?m distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

Abstract: A photolithography arrangement including an illumination source, which emits radiation with a predetermined wavelength directed towards a substrate, a projection mask for modulating the radiation of the illumination source, an optical system for imaging the radiation modulated by the projection mask onto the substrate, and a metal mask, which includes a transparent mask carrier and a metal mask arranged thereon, arranged successively in the beam path. The metal mask is designed so that the modulated radiation is transmitted through the metal mask by means of surface plasmons.

Abstract: A resonator structure containing an active layer is subdivided into at least two sections in which mode spacings differ from one another by 7 to 10 percent on account of different length dimensions or as a result of grating structures provided therefor. Photonic crystals are integrated as longitudinal and, if appropriate, as lateral boundaries of the resonator structure. Variation of the currents in the sections enables the laser to be tuned in a wide wavelength range.

Abstract: Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 ?m distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

Abstract: Device having a two-dimensionally formed support material which has, spread across at least one surface area, a plurality of pores which stretch throughout from one surface of the support material to the opposite surface, wherein the pores are bound in each case by a pore boundary area of pore walls formed in the support material along particular longitudinal axes of the pores, and at least part of the pore walls have at least in some sections a layered structure containing a first layer forming the pore boundary area and a second layer adjacent to the first layer and spaced apart from the pore boundary area, and wherein the refractive index nwaveguide of the first layer is greater than the refractive index n2 of the second layer.

Abstract: The invention relates to a thermo-optical waveguide switch which is located on a substrate. Said switch comprises a glass layer, through which a waveguide extends. A hollow chamber which lies beneath the waveguide thermally decouples the latter from the substrate. At least two supports are located in the hollow chamber to provide mechanical stability. One production method for obtaining a thermo-optical waveguide switch consists of creating a glass layer with an arrangement of perforations on a substrate. At least one hollow chamber containing at least two supports is formed by isotropically underetching the glass layer. The hollow chamber is subsequently sealed and a waveguide is formed above said hollow chamber. Another production method first creates a waveguide in a glass layer which is formed on a substrate.

Abstract: A resonator structure containing an active layer is subdivided into at least two sections in which mode spacings differ from one another by 7 to 10 percent on account of different length dimensions or as a result of grating structures provided therefor. Photonic crystals are integrated as longitudinal and, if appropriate, as lateral boundaries of the resonator structure. Variation of the currents in the sections enables the laser to be tuned in a wide wavelength range.

Abstract: In the method and the arrangement, a ratio (p2/P3)—which is independent of the total optical power of the laser (1)—between a power (p2) essentially containing only the wavelength (&lgr;) to be stabilized, which power is filtered out from a portion (P2) of the total power (P0), and an additional portion (P3) is measured and compared to a desired value (S0), and, given a deviation from the desired value (S0), the temperature of the laser (1) is controlled to the desired value (S0).

Abstract: A monolithically integrated WDM demultiplex module has a film wave guide of InGaAsP fashioned on a substrate, a photodiode of InGaAs being applied to the film wave guide. The photodiode is optically coupled to the film wave guide by a leakage coupling. A wavelength selection element in the form of a grating is provided in the surface of the film wave guide. The module can be manufactured with a single epitaxial step. Structures for increasing the crosstalk attenuation of the module and for a better coupling-in of radiation into the module are provided.