Patents by Inventor Reinhard Salchner

Reinhard Salchner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and arrangement for repairing memory chips using microlithography methods
    Publication number: 20070066367
    Abstract: The present invention relates to methods for repairing memory chips (7) with redundant cell areas and fuses using microlithography means, characterized by the following method steps: a) photoresist is applied to at least one wafer (6) which is to be repaired; b) a mask (1) is created in line with the chip-specific fuse coordinates; and c) at least one wafer (6) provided with photoresist is exposed using an exposure means through the mask (1); and an arrangement for a method for repairing memory chips (7) with redundant cell areas and fuses using microlithography means, where the arrangement comprises an application unit for photoresist onto wafers (6) which are to be repaired, a controllable mask (1) and an exposure means (2).
    Type: Application
    Filed: November 12, 2004
    Publication date: March 22, 2007
    Inventors: Jochen Kallscheuer, Bernhard Ruf, Reinhard Salchner, Helmut Schneider
  • Configuration and method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory
    Patent number: 6661694
    Abstract: A configuration and a method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory utilize the imprint effect for increasing the remanent polarization or remanent magnetization of a material having a hysteresis property. The remanent polarization or magnetization is increased by writing a memory content a number of times to the same memory cells.
    Type: Grant
    Filed: November 15, 2001
    Date of Patent: December 9, 2003
    Assignee: Infineon Technologies AG
    Inventors: Michael Kund, Reinhard Salchner
  • Configuration and method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory
    Publication number: 20020071303
    Abstract: A configuration and a method for increasing the retention time and the storage security in a ferroelectric or ferromagnetic semiconductor memory utilize the imprint effect for increasing the remanent polarization or remanent magnetization of a material having a hysteresis property. The remanent polarization or magnetization is increased by writing a memory content a number of times to the same memory cells.
    Type: Application
    Filed: November 15, 2001
    Publication date: June 13, 2002
    Inventors: Michael Kund, Reinhard Salchner