Abstract: The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.

Abstract: The present invention relates to a method for treating the surface of a wafer with multiple liquids, comprising rotating the surface of the wafer and discharging different liquid streams onto the rotating surface in a sequence from separate outlets, wherein the discharge of liquid streams which are contiguous in the sequence overlaps during a transition phase, and wherein during the transition phase the liquid streams merge after exiting said outlets to form a merged liquid stream before impacting the rotating surface. The invention also provides a liquid dispensing device incorporating a housing holding two or more liquid delivery tubes, wherein the tubes' outlets are inwardly angled towards one another, such that in use liquid streams delivered from the outlets of the two or more liquid delivery tubes merge to form a merged liquid stream.

Abstract: A liquid mixture for etching a substrate includes acetic acid in a range of 15 to 70 mass. % of the liquid mixture, nitric acid in a range of 5 to 50 mass. % of the liquid mixture, sulfuric acid in a range of 8 to 50 mass. % of the liquid mixture, and water in a range of 0 to 30 mass. % of the liquid mixture.

Abstract: A method for cleaning a surface of a plate-like article includes the steps of: treating the surface with free flow cleaning, wherein liquid is dispensed through a dispense nozzle onto the surface in a continuous liquid flow, and treating the surface with spray cleaning, wherein liquid is directed through a spray nozzle towards the surface in form of droplets. The surface is treated with a spray cleaning step before the free flow cleaning step and a spray cleaning step after the free flow cleaning step.

Abstract: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas/liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated.

Abstract: A method for cleaning a surface of a plate-like article includes the steps of: treating the surface with free flow cleaning, wherein liquid is dispensed through a dispense nozzle onto the surface in a continuous liquid flow, and treating the surface with spray cleaning, wherein liquid is directed through a spray nozzle towards the surface in form of droplets. The surface is treated with a spray cleaning step before the free flow cleaning step and a spray cleaning step after the free flow cleaning step.

Abstract: In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instead of as in the prior art the etching medium being applied in drops, the etching medium is applied in a continuous flow with a flow rate of at least 0.4 l/min so that the etching medium covers the entire surface of the semiconductor substrate to be planarized. This technique yields a differentiated etching rate, the etching speed in the area of the fields between the trenches or contact holes being greater than in the area of the trenches themselves, so that as a result the coating applied to the semiconductor substrate is etched away more quickly than in the area of the trenches and finally material remains only in the area of the trenches or contact holes.

Abstract: In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instead of as in the prior art the etching medium being applied in drops, the etching medium is applied in a continuous flow with a flow rate of at least 0.4 l/min so that the etching medium covers the entire surface of the semiconductor substrate to be planarized. This technique yields a differentiated etching rate, the etching speed in the area of the fields between the trenches or contact holes being greater than in the area of the trenches themselves, so that as a result the coating applied to the semiconductor substrate is etched away more quickly than in the area of the trenches and finally material remains only in the area of the trenches or contact holes.

Abstract: The invention concerns a device for wet etching an edge of a semiconductor disk.