Patents by Inventor Reinhard Stengel

Reinhard Stengel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6558770
    Abstract: A substrate made from silicon has a first region and a second region. Through pores are formed in the first region. Pores that do not traverse the substrate are provided in the second region. The production of the work piece is performed with the aid of electrochemical etching of the pores. The entire surface of the substrate is covered with a mask layer that is structured photolithographically on the rear of the substrate. The bottoms of the pores in the second region are etched clear, preferably using KOH.
    Type: Grant
    Filed: November 8, 2000
    Date of Patent: May 6, 2003
    Assignee: Infineon Technologies AG
    Inventors: Volker Lehmann, Hans Reisinger, Hermann Wendt, Reinhard Stengel, Gerrit Lange, Stefan Ottow