Abstract: A semiconductor module having a high dissipated power has an electrically insulating and thermally conducting layer of crystalline carbon provided between a semiconductor chip and a heat elimination element, whereby the semiconductor chip, the insulating layer and the heat elimination element are connected via an intermediate layer and via connecting layers of silver by pressure sintering. For low-voltage applications, a layer of amorphous carbon can alternatively be employed instead of the layer of crystalline carbon. Extremely low heat transmission resistance between the semiconductor chip and the heat elimination element is provided.

Abstract: A power semiconductor component includes a semiconductor body having anode and cathode sides and a given thermal coefficient of expansion. Contact electrodes are each disposed on a respective one of the anode and cathode sides and are made of a metal having a thermal coefficient of expansion differing from the given thermal coefficient of expansion. At least two contact surfaces are disposed one above the other under pressure, between the semiconductor body and the contact electrodes. At least one of the contact surfaces has a layer formed of an amorphous carbon-metal compound.

Abstract: A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buffer. This auxiliary member increases the loadability of the semiconductor component with respect to additional, thermal stressing pulses.

Abstract: A method for producing a semiconductor modular structure includes placing semiconductor bodies, a ceramic substrate with metallizing, and a metal base plate, in an elastomer compression mold. A heatable pressure ram with a surface being concave relative to the base plate is placed on the base plate. At least the base plate and the ceramic substrate are convexely deformed and joined with pressure exerted by the pressure ram, at a temperature above room temperature.

Abstract: A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buffer. This auxiliary member increases the loadability of the semiconductor component with respect to additional, thermal stressing pulses.

Abstract: Thyristor with defined lateral resistor and method for the manufacturing thereof. The thyristor has a resistor area (5) for the generation of a lateral resistor, for example between an emitter field (8) and an auxiliary emitter field (7), whereby the resistor are (5) has a defined lower doping concentration than the layer (2) surrounding it. The defined lower doping concentration is generated by recesses (3) in an occupation layer and can be adjusted by the ratio of the widths alternately arranged recesses (3) and ribs (4). The recess (3) and the ribs (4) are generated either by diffusion and subsequent etching or by implantation with an implantation mask, before the deposition layer is driven into the semiconductor body of the thyristor by heat supply from a surface.

Abstract: A thyristor having low-reflection light-triggering structure. In a light-triggerable thyristor, pyramidal depressions are formed in a simple manner by a preferred etching method, being formed in the region of the photon entry face in order to produce a low-reflection light-triggering structure. Incident light is absorbed in the pyramidal depressions largely independent of the wavelength of the incident light and nearly completely. The low-reflection light-triggering structure thereby produced can be formed with relatively little outlay. This is especially true when a defined overhead ignition voltage is simultaneously set by the pyramidal depressions.

Abstract: A thyristor having low-reflection light-triggering structure. In a light-triggerable thyristor, pyramidal depressions are formed in a simple manner by a preferred etching method, being formed in the region of the photon entry face in order to produce a low-reflection light-triggering structure. Incident light is absorbed in the pyramidal depressions largely independent of the wavelength of the incident light and nearly completely. The low-reflection light-triggering structure thereby produced can be formed with relatively little outlay. This is especially true when a defined overhead ignition voltage is simultaneously set by the pyramidal depressions.

Abstract: A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

Abstract: A thyristor having high forward and reverse blocking capability and a method for the manufacture thereof. The thyristor has a p-base region separated from an n-base lying therebelow by a first planar pn-junction that very gradually approaches an upper side of the thyristor at its edge region. A p-emitter is composed of a p-conductive layer inserted at the under side of the thyristor that is continued in a p-conductive lateral zone that laterally limits the thyristor and extends from an under side up to the upper side. This p-conductive lateral zone merges into a p-conductive semiconductor zone that is inserted at the upper side of the thyristor. This latter p-conductive semiconductor zone extends from a part of the lateral zone lying at the upper side, proceeds along the upper side of the thyristor in the direction toward the edge termination of the p-base region, and is separated from the n-base by a second planar pn-junction that very gradually approaches the upper side.

Abstract: A method for producing a p-doped semiconductor region in an n-conductive semiconductor body by means of diffusion using a combination of both aluminum and boron as dopants. The semiconductor body is positioned within a hollow silicon member which itself is located within a refractory tube. The refractory tube is evacuated to a very low pressure and then the interior of the tube is heated for a time and at a temperature sufficient to diffuse both aluminum and boron into the semiconductor body.

Abstract: A light-triggerable thyristor comprises a cathode contact and a light conductor arranged in a bore thereof for supplying trigger energy. In order to obtain optimally low losses of the trigger energy and to guarantee simple assembly and interchangeability, the end of the light conductor at the side of the thyristor is surrounded by a rigid sleeve which is pluggable into a sleeve-shaped insert mounted in the bore. In particular, a central region of the cathode contact is fashioned raised in comparison to a flange-like projection of the cathode contact which is connected to a ceramic envelope, and the central region is provided with a groove which serves for receiving an angled portion of the rigid sleeve. The invention is particularly suited for power thyristors in high-voltage DC transmission systems.

Abstract: A method for the manufacture of a pn-junction having high dielectric strength starting with a doped semiconductor body of a first conductivity type. A zone of a second conductivity type is formed in the semiconductor body inwardly from a surface thereof. At least one recess is then provided inwardly from the surface and including a recess which is formed at the extreme marginal edge of the semiconductor body. Dopant of the second conductivity type is diffused into the semiconductor body to form zones of varying dopant penetration depths from the center of the body to the marginal edge.

Abstract: A method for manufacturing regions having adjustable uniform doping in silicon crystal wafers by neutron irradiation according to the reaction Si.sup.30 (n,.gamma.) Si.sup.31 .beta..sup.- P.sup.31 includes the steps of covering the silicon crystal wafer with neutron-absorbing materials of different thicknesses during the irradiation, and selecting materials having isotopes having a high absorption cross-section which yield stable isotopes in the nuclear reaction having small or short-lived activity. Suitable isotopes are B.sup.10, Cd.sup.113, Sm.sup.149, Gd.sup.155 and Gd.sup.157. The regions are generated photolithographically. By such specific material selection, very small layer thicknesses can be used and microfine surface zones or areas can be doped with high geometrical precision and large penetration depth. The method is particularly suited for manufacturing power thyristors.