Abstract: A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

Abstract: A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.

Abstract: A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.

Abstract: A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Abstract: A method for reducing variations in the bending of rolled metal base plates for semiconductor modules is disclosed. In this method, the base plates are rolled in their longitudinal direction in a specific manner.

Abstract: A semiconductor device includes a baseplate and a first and a second insulated gate bipolar transistor (IGBT) substrate coupled to the baseplate. The semiconductor device includes a first and a second diode substrate coupled to the baseplate and a first, a second, and a third control substrate coupled to the baseplate. Bond wires couple the first and second IGBT substrates to the first control substrate. Bond wires couple the first and second IGBT substrates to the second control substrate via the first and second diode substrates, and bond wires couple the first and second IGBT substrates to the third control substrate via the second diode substrate.

Abstract: The power semiconductor module (1) has a heat-conducting base plate (11) on which at least three substrates (2, 3, 4, 5, 6, 7) are placed, each substrate supporting at least one power semiconductor component (8, 9) that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates (2, 3, 4, 5, 6, 7) are placed on the base plate (11) while being arranged in a single row (12), and pressing devices (15, 16), which are situated close to the substrate, are provided on both longitudinal sides (11a, 11b) of the base plate (11) while being arranged parallel to the row (12). The base plate can be pressed against a cooling surface by the pressing devices.

Abstract: A power semiconductor module comprises a housing. The housing comprises a casing and at least one coating of high resistance to surface tracking. A plurality of electrical conductors is provided on the housing. The coating is provided on a creepage distance that is provided between the electrical conductors.

Abstract: A power module has several circuit units (20, 21) that are electrically connected in parallel and are provided with terminal contacts (5, 5?) which are electrically and mechanically interconnected via at least one current-conducting saddle (26). In order to create a power module which is easy to produce and in which the current-conducting saddle (26) requires little space, the saddle (26) is embodied in several parts while encompassing a terminal element (12) that can be connected in a fixed manner to a terminal contact (5) of a circuit unit (20) independently of a connecting element (25) of the saddle (26). The connecting element (25) of the saddle (26) extends on a plane that is spaced apart from the circuit unit (20) while being electrically connected to the terminal element (12).

Abstract: A power semiconductor module comprises a housing. The housing comprises a casing and at least one coating of high resistance to surface tracking. A plurality of electrical conductors is provided on the housing. The coating is provided on a creepage distance that is provided between the electrical conductors.

Abstract: A semiconductor module having a current connection element designed for a high current carrying capability is disclosed. In one embodiment, the current connection element includes a plurality of metal layers which rest directly on one another.

Abstract: The power semiconductor module (1) has a heat-conducting base plate (11) on which at least three substrates (2, 3, 4, 5, 6, 7) are placed, each substrate supporting at least one power semiconductor component (8, 9) that gives off heat generated during operation. In order to optimize a power semiconductor module of this type with regard to mechanical load and heat dissipation, the substrates (2, 3, 4, 5, 6, 7) are placed on the base plate (11) while being arranged in a single row (12), and pressing devices (15, 16), which are situated close to the substrate, are provided on both longitudinal sides (11a, 11b) of the base plate (11) while being arranged parallel to the row (12). The base plate can be pressed against a cooling surface by the pressing devices.

Abstract: A power module has several circuit units (20, 21) that are electrically connected in parallel and are provided with terminal contacts (5, 5?) which are electrically and mechanically interconnected via at least one current-conducting saddle (26). In order to create a power module which is easy to produce and in which the current-conducting saddle (26) requires little space, the saddle (26) is embodied in several parts while encompassing a terminal element (12) that can be connected in a fixed manner to a terminal contact (5) of a circuit unit (20) independently of a connecting element (25) of the saddle (26). The connecting element (25) of the saddle (26) extends on a plane that is spaced apart from the circuit unit (20) while being electrically connected to the terminal element (12).

Abstract: A method for reducing variations in the bending of rolled metal base plates for semiconductor modules is disclosed. In this method, the base plates are rolled in their longitudinal direction in a specific manner.

Abstract: A bridge module includes at least two bridge branches. At least two respective controllable semiconductor switches are provided for each of the bridge branches. Electrically insulating and thermally conductive substrates have conductor tracks and are connected to a metal base plate. The semiconductor switches are electrically conductively mounted on the substrates. A housing has at least two AC terminals and four DC terminals. AC connection leads are connected to the AC terminals and to the semiconductor switches. DC connection leads are connected to the DC terminals and to the semiconductor switches. Each of the bridge branches has two of the DC connection leads and two of the DC terminals. All of the DC terminals of one and the same polarity are connectable to one another by leads being adjacent one another and disposed outside the housing.

Abstract: A semiconductor module includes a metal base plate having a plane upper sace and a convex lower surface. An electrically insulating and thermally conductive substrate is material-lockingly connected to the upper surface of the metal base plate. Semiconductor chips are material-lockingly connected to an upper surface of the substrate.

Abstract: A plurality of semiconductor arrangements arranged on interconnects are cected parallel to one another in a module. The arrangements lie opposite one another in pairs. At least one pair and at most two pairs of semiconductor arrangements are arranged to follow one another in the direction of an axis of the module and are further connected to lead conductors. Positions of the lead conductors with respect to the contacted semiconductor arrangements are the same for each pair of semiconductor arrangements or, respectively, two respective pairs of semiconductor arrangements. Corresponding lead conductors are connected to one another above the interconnects.

Abstract: A dual flat-spring electrical contact includes a contact receptacle which contains a separation gap and on which spring prongs protrude on one side while the cable connector protrudes on the other side. The contact receptacle is rigidly locked against expansion, as in the area of the separating gap, during insertion of a contact pin between the prongs because on a receptacle wall, in the area of the separating gap, there protrudes a T-shaped cover plate for which there is provided a holding recess which adjoins an adjacent contact receptacle wall.