Abstract: A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.

Abstract: A lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern; removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.

Abstract: A method is disclosed. A change in position of a substrate in a direction substantially parallel to a direction of propagation of a radiation beam that is, or is to be, projected on to that substrate is determined, which change in position would result in a lithographic error in the application of a pattern to that substrate using that radiation beam. The change in position of the substrate is used to control a property of the radiation beam when, or as, the radiation beam is projected onto the substrate in order to reduce the lithographic error.

Abstract: A method is disclosed. A change in position of a substrate in a direction substantially parallel to a direction of propagation of a radiation beam that is, or is to be, projected on to that substrate is determined, which change in position would result in a lithographic error in the application of a pattern to that substrate using that radiation beam. The change in position of the substrate is used to control a property of the radiation beam when, or as, the radiation beam is projected onto the substrate in order to reduce the lithographic error.

Abstract: A method is described for obtaining information for use in modeling of a lithographic process. A pattern feature is formed on a target portion of a substrate by projecting a beam of radiation onto the target portion of the substrate. For that target portion the lithographic process is characterized by one or both of a first property that varies in a first direction along a surface of the substrate, and a second property that varies in a second direction along a surface of the substrate. A property of the pattern feature is measured. Using the measured property of the pattern feature and at least one of the first and second properties, information is obtained for use in modeling the process. The lithographic process may be or include the projection of the beam of radiation onto the surface of the substrate.

Abstract: A lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern; removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.