Patents by Inventor Remi Beneyton

Remi Beneyton has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • FINFET DEVICE WITH SILICIDED SOURCE-DRAIN REGIONS AND METHOD OF MAKING SAME USING A TWO STEP ANNEAL
    Publication number: 20140106529
    Abstract: A thermal annealing flow process includes the steps of: depositing a metal or metal alloy on a silicon semiconductor structure, performing a first annealing of a rapid thermal anneal (RTA) type to produce a metal rich phase in a portion of the silicon semiconductor structure, removing unreacted metal or metal alloy and performing a second annealing as a millisecond annealing at a temperature that is below a melt temperature of the silicon material present in the silicon semiconductor structure.
    Type: Application
    Filed: October 10, 2013
    Publication date: April 17, 2014
    Applicants: STMICROELECTRONICS (CROLLES 2) SAS, STMICROELECTRONICS, INC.
    Inventors: Pierre Morin, Remi Beneyton
  • Process for assembling substrates with low-temperature heat treatments
    Patent number: 8530331
    Abstract: The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: September 10, 2013
    Assignee: Commissariat a l'Energie Atomique
    Inventors: Remi Beneyton, Hubert Moriceau, Frank Fournel, Francois Rieutord, Yannick Le Tiec
  • PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS
    Publication number: 20120088352
    Abstract: The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 12, 2012
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Rémi Beneyton, Hubert Moriceau, Frank Fournel, François Rieutord, Yannick Le Tiec
  • PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS
    Publication number: 20090162991
    Abstract: The invention relates to a process for producing a bond between a first and a second substrate (2, 4), comprising: a) a step of preparing surfaces (6, 8) to be assembled, b) an assembly of these two surfaces, by direct molecular bonding, c) a heat treatment step involving at least maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
    Type: Application
    Filed: April 6, 2007
    Publication date: June 25, 2009
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE
    Inventors: Rémi Beneyton, Hubert Moriceau, Frank Fournel, Francois Rieutord, Yannick Le Tiec