Abstract: A method for processing a substrate that includes: loading the substrate in a plasma processing chamber; performing a cyclic plasma etch process including a plurality of cycles, where each cycle of the plurality of cycles includes: generating a first plasma from a first gas mixture including a fluorosilane and oxygen; performing a deposition step by exposing the substrate to the first plasma to form a passivation film including silicon and fluorine; generating a second plasma from a second gas mixture including a noble gas; and performing an etch step by exposing the substrate to the second plasma.

Abstract: An etching method includes: a physical adsorption process of physically adsorbing an adsorbate based on a first processing gas on a film to be etched under a condition that the pressure of the first processing gas is smaller than the saturated vapor pressure of the first processing gas with respect to a temperature of an object to be processed while cooling the object to be processed on which the film to be etched is formed; and an etching process of etching the film to be etched by reacting the adsorbate with the film to be etched by a plasma of a second processing gas.

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Abstract: A method of an embodiment includes (i) a step of supplying a first gas to a chamber, wherein the first gas is perfiuorotetraglyme gas, and (ii) a step of generating plasma of a second gas for etching of a porous film in order to etch the porous film at the same time as the step of supplying a first gas or after the step of supplying a first gas. Partial pressure of the first gas in the chamber or pressure of the first gas in the chamber when only the first gas is supplied to the chamber is higher than critical pressure causing capillary condensation of the first gas in the porous film and is lower than saturated vapor pressure of the first gas at a temperature of the workpiece during execution of the step of supplying a first gas.

Abstract: A plasma etching method includes a physisorption step for causing an adsorbate that is based on first processing gas to be physisorbed onto a film to be etched, while cooling an object to be processed on which the film to be etched is provided; and an etching step for etching the film to be etched by causing the adsorbate to react with the film to be etched, using the plasma of second processing gas.

Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.

Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.

Abstract: The invention concerns a radiation source, comprising an anode (2), a cathode (3), an electric discharge gap (4) between the anode (2) and the cathode (3) and a gas input conduit (30) in the discharge gap (4). The gas input conduit (30) is electrically connected to the anode and the cathode. The invention is characterized in that the gas input conduit (30) is supplied with gas by a gas supply conduit (32), designed to form between its portion (42) connected to the gas input conduit (30) and another of its portions connected to a fixed potential, an electric impedance such that it counters the generation of electric discharges inside the gas input conduit (30).

Abstract: The invention concerns a radiation source, comprising an anode (2), a cathode (3), an electric discharge gap (4) between the anode (2) and the cathode (3) and a gas input conduit (30) in the discharge gap (4). The gas input conduit (30) is electrically connected to the anode and the cathode. The invention is characterized in that the gas input conduit (30) is supplied with gas by a gas supply conduit (32), designed to form between its portion (42) connected to the gas input conduit (30) and another of its portions connected to a fixed potential, an electric impedance such that it counters the generation of electric discharges inside the gas input conduit (30).