Abstract: A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.

Abstract: A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements; forming, by ion implantation, alignment units, the largest size of which is smaller than one millimeter, and a second doped region, adjacent to the first region with a second concentration of doping elements; heat-treating the substrate to activate the doping elements and to form an oxide layer at the surface of the substrate, the second concentration and the heat treatment conditions being selected such that the oxide layer has a thickness above the alignment units that is larger, by at least 10 nm, than the thickness of the oxide layer above an area of the substrate adjacent to the alignment units; depositing an antireflection layer onto the oxide layer; and depositing an electrode onto the antireflection coating, through a screen, opposite the second region.

Abstract: The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field.

Abstract: Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.

Abstract: The invention relates to a method of purifying a crystalline silicon substrate and to a process for producing a photovoltaic cell. The method of purifying a crystalline silicon substrate according to the invention is of the type that includes a step of extracting impurities by external gettering and which includes, before said step of extracting the impurities by external gettering, at least one step of rapidly annealing the substrate at a temperature of between 750° C. and 1000° C. inclusive for a time of between 1 second and 10 minutes inclusive. The invention is particularly applicable in the photovoltaic cell field.

Abstract: Method of processing a substrate containing at least one semiconductor of the SiXAY type and comprising at least four separate types of light elements, comprising at least the following steps: carrying out a first anneal of the substrate at a temperature T1 corresponding to a thermal activation temperature for a first one of the four types of light elements, carrying out a second anneal of the substrate at a temperature T2 corresponding to a thermal activation temperature for a second one of the four types of light elements, carrying out a third anneal of the substrate at a temperature T3 corresponding to a thermal activation temperature for a third one of the four types of light elements, carrying out a fourth anneal of the substrate at a temperature T4 corresponding to a thermal activation temperature for a fourth one of the four types of light elements, each anneal comprising a holding at the temperature T1, T2, T3 or T4 and the temperatures T1, T2, T3 and T4 being such that T1>T2>T3>T4.