Patents by Inventor Remis Gaska

Remis Gaska has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Radio-frequency switch circuit with separately controlled shunt switching device
    Patent number: 8299835
    Abstract: A switch circuit is provided that includes at least one main switching device and at least one shunt switching device. Each main switching device is connected in series with a conductor that carries an RF signal between an input circuit and an output circuit. Each shunt switching device is connected between a controlling terminal of the main switching device and a high frequency ground. The switch circuit can provide substantially improved OFF state isolation over other approaches.
    Type: Grant
    Filed: February 2, 2009
    Date of Patent: October 30, 2012
    Assignee: Sensor Electronic Technology, Inc.
    Inventors: Alexei Koudymov, Grigory Simin, Michael Shur, Remis Gaska
  • RADIO-FREQUENCY SWITCH CIRCUIT
    Publication number: 20090195232
    Abstract: A switch circuit is provided that includes at least one main switching device and at least one shunt switching device. Each main switching device is connected in series with a conductor that carries an RF signal between an input circuit and an output circuit. Each shunt switching device is connected between a controlling terminal of the main switching device and a high frequency ground. The switch circuit can provide substantially improved OFF state isolation over other approaches.
    Type: Application
    Filed: February 2, 2009
    Publication date: August 6, 2009
    Inventors: Alexei Koudymov, Grigory Simin, Michael Shur, Remis Gaska
  • FIELD EFFECT TRANSISTOR WITH GATE HAVING VARYING SHEET RESISTANCE
    Publication number: 20090173999
    Abstract: A field effect transistor (FET) comprising a gate structure that includes at least one gate having a varying sheet resistance in a direction between a source contact and a drain contact. In an illustrative embodiment, the FET can be configured to operate as a radio frequency switch. In this case, the FET can provide improved performance with respect to both the off-state capacitances and radio frequency isolations over similar FETs implemented with typical gates.
    Type: Application
    Filed: January 8, 2009
    Publication date: July 9, 2009
    Inventors: Remis Gaska, Alexei Koudymov, Michael Shur, Grigory Simin