Patents by Inventor Remo Baumann

Remo Baumann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250111989
    Abstract: The present disclosure relates to a method for detecting a DC magnetization in a transformer and controlling the transformer, the method including: sensing, using at least one vibration sensor, at least one vibration on at least one surface of the transformer or on at least one surface of a component connected to the transformer; measuring the sensed at least one vibration; detecting, based on the measured at least one vibration, the DC magnetization in the transformer; and controlling, based on the detected DC magnetization, the transformer. The present disclosure also relates to a respective device and system.
    Type: Application
    Filed: March 10, 2023
    Publication date: April 3, 2025
    Inventors: Daniel Siemaszko, Stefanie Heinig, Juergen Steinke, Noemi Hubatka, Remo Baumann
  • Patent number: 11139219
    Abstract: A bypass thyristor device includes a semiconductor device providing a thyristor with a cathode electrode on a cathode side, a gate electrode on the cathode side surrounded by the cathode electrode and an anode electrode on an anode side; an electrically conducting cover element arranged on the cathode side and in electrical contact with the cathode electrode on a contact side; and a gate contact element electrically connected to the gate electrode and arranged in a gate contact opening in the contact side of the cover element; wherein the cover element has a gas expansion volume in the contact side facing the cathode side, which gas expansion volume is interconnected with the gate contact opening for gas exchange.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: October 5, 2021
    Assignee: ABB Schweiz AG
    Inventors: Tobias Wikström, Remo Baumann, Sascha Populoh, Bjoern Oedegard
  • Publication number: 20200144141
    Abstract: A bypass thyristor device includes a semiconductor device providing a thyristor with a cathode electrode on a cathode side, a gate electrode on the cathode side surrounded by the cathode electrode and an anode electrode on an anode side; an electrically conducting cover element arranged on the cathode side and in electrical contact with the cathode electrode on a contact side; and a gate contact element electrically connected to the gate electrode and arranged in a gate contact opening in the contact side of the cover element; wherein the cover element has a gas expansion volume in the contact side facing the cathode side, which gas expansion volume is interconnected with the gate contact opening for gas exchange.
    Type: Application
    Filed: January 8, 2020
    Publication date: May 7, 2020
    Inventors: Tobias Wikström, Remo Baumann, Sascha Populoh, Bjoern Oedegard