Patents by Inventor Remy OBRECHT

Remy OBRECHT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for fabricating at least one semiconductor structure comprising a step of separation relative to the growth substrate
    Patent number: 10748762
    Abstract: The invention relates to a process for fabricating at least one semiconductor structure (20) separated from a support substrate (11), comprising the following steps: producing a two-dimensional nucleation layer (13) starting from the support substrate (11), producing the semiconductor structure (20) by epitaxy starting from the nucleation layer, obtaining a first electrode (30) located in a lateral zone (3) which borders the semiconductor structure; placing the structure thus obtained in an aqueous electrolytic bath (50); applying a potential difference between the electrodes (30, 40) until the separation of the semiconductor structure (20) relative to the support substrate (11) is brought about.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: August 18, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Remy Obrecht, Carole Pernel
  • PROCESS FOR FABRICATING AT LEAST ONE SEMICONDUCTOR STRUCTURE COMPRISING A STEP OF SEPARATION RELATIVE TO THE GROWTH SUBSTRATE
    Publication number: 20200020527
    Abstract: The invention relates to a process for fabricating at least one semiconductor structure (20) separated from a support substrate (11), comprising the following steps: producing a two-dimensional nucleation layer (13) starting from the support substrate (11), producing the semiconductor structure (20) by epitaxy starting from the nucleation layer, obtaining a first electrode (30) located in a lateral zone (3) which borders the semiconductor structure; placing the structure thus obtained in an aqueous electrolytic bath (50); applying a potential difference between the electrodes (30, 40) until the separation of the semiconductor structure (20) relative to the support substrate (11) is brought about.
    Type: Application
    Filed: July 11, 2019
    Publication date: January 16, 2020
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Remy OBRECHT, Carole PERNEL