Patents by Inventor Ren D. Earl

Ren D. Earl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEM AND METHOD FOR ENABLING CHIP LEVEL ERASING AND WRITING FOR MAGNETIC RANDOM ACCESS MEMORY DEVICES
    Publication number: 20030227794
    Abstract: The system and method disclosed employ one or more switchable, close proximity electromagnets as part of the MRAM device circuit package to apply external magnetic fields to the magnetic elements and conductive lines of the MRAM array. A magnetic field generated by an electromagnet spanning all or part of an MRAM array could be used to selectively erase the MRAM array in whole or in part, respectively. In addition, the magnetic fields could be generated to support the magnetic fields sought to be induced by application of current to the row and column lines of the MRAM array, allowing for the writing of data to magnetic elements in the MRAM array using less power. In addition, diagonally disposed electromagnets could be used to generate these magnetic fields, and could also be used to demagnetize the row and column lines of the MRAM array.
    Type: Application
    Filed: January 13, 2003
    Publication date: December 11, 2003
    Inventors: Ren D. Earl, Jeffrey A. McKee
  • System and method for enabling chip level erasing and writing for magnetic random access memory devices
    Patent number: 6650564
    Abstract: The system and method disclosed employ one or more switchable, close proximity electromagnets as part of the MRAM device circuit package to apply external magnetic fields to the magnetic elements and conductive lines of the MRAM array. A magnetic field generated by an electromagnet spanning all or part of an MRAM array could be used to selectively erase the MRAM array in whole or in part, respectively. In addition, the magnetic fields could be generated to support the magnetic fields sought to be induced by application of current to the row and column lines of the MRAM array, allowing for the writing of data to magnetic elements in the MRAM array using less power. In additional, diagonally disposed electromagnets could be used to generate these magnetic fields, and could also be used to demagnetize the row and column lines of the MRAM array.
    Type: Grant
    Filed: January 13, 2003
    Date of Patent: November 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Ren D. Earl, Jeffrey A. McKee
  • System and method for enabling chip level erasing and writing for magnetic random access memory devices
    Patent number: 6522577
    Abstract: The system and method disclosed employ one or more switchable, close proximity electromagnets as part of the MRAM device circuit package to apply external magnetic fields to the magnetic elements and conductive lines of the MRAM array. A magnetic field generated by an electromagnet spanning all or part of an MRAM array could be used to selectively erase the MRAM array in whole or in part, respectively. In addition, the magnetic fields could be generated to support the magnetic fields sought to be induced by application of current to the row and column lines of the MRAM array, allowing for the writing of data to magnetic elements in the MRAM array using less power. In addition, diagonally disposed electromagnets could be used to generate these magnetic fields, and could also be used to demagnetize the row and column lines of the MRAM array.
    Type: Grant
    Filed: June 5, 2002
    Date of Patent: February 18, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Ren D. Earl, Jeffrey A. McKee