Abstract: A fluorine-containing elastomer composition includes a curable fluorine-containing polymer comprising at least one fluorinated cure site monomer having a cure site; an group IIIB element-containing reinforcing additive in an amount of 8 to 15 weight parts with respect to 100 weight parts of the curable fluorine-containing polymer; and a curative configured for curing the at least one fluorinated cure site monomer.

Abstract: A system for processing a semiconductor device is provided. The system includes a chamber, a carrier disposed in the chamber and configured to holding a substrate, and a protective structure disposed on the chamber. The protective structure includes a first protective layer disposed on a surface of the chamber and a second protective layer disposed on the first protective layer. The first protective layer is amorphous. The second protective layer is crystalline.

Abstract: A method includes forming a first coating comprising amorphous rare earth metal-containing oxide on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N1 times. The method also includes forming a second coating comprising crystalline rare earth metal oxide on the first coating using a second ALD process. The method also includes forming a third coating comprising amorphous rare earth metal-containing oxide on the second coating using a third ALD process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide deposition cycles N2 times. The method also includes forming a fourth coating comprising crystalline rare earth metal oxide on the third coating using a fourth ALD process. In some embodiments, a ratio of N1 to N2 is between about 100 and about 150.

Abstract: A ceramic article includes a ceramic body including a spinel (MgAl2O4) structure, wherein a ratio of a density of the spinel structure to a theoretical density of a spinel is greater than 99.5%. A semiconductor apparatus for manufacturing a semiconductor structure includes a ceramic article including a spinel (MgAl2O4) structure, wherein a ratio of a density of the spinel structure to a theoretical density of a spinel is greater than 99.5%. A method of manufacturing a ceramic article includes providing a green body; heating the green body to a sintering temperature; compressing the green body; applying a electrical pulse to the green body; and forming a ceramic body including a spinel (MgAl2O4) structure after heating, compressing and applying the electrical pulse to the green body.

Abstract: A method of removing a nitride-containing by-product from a component of a semiconductor apparatus includes heating the component to a predetermined temperature for a predetermined duration, wherein the nitride-containing by-product is transformed into an oxide-containing or oxynitride-containing product by the heating; and removing the oxide-containing or oxynitride-containing product with an acid solution. Another method of removing a by-product from a component of a semiconductor apparatus includes heating the component to a predetermined temperature; cooling the component from the predetermined temperature to a room temperature; rinsing the component with an acid solution including and HNO3 after the component is cooled; and washing the by-product and the acid solution off the component.

Abstract: Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance. In one embodiment, a ceramic material is formed from a composition comprising Al2O3, MgO, SiO2.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components, methods of coating chamber components and systems with a metal fluoride coating that includes at least one metal fluoride having a formula of M1xFw, M1xM2yFw or M1xM2yM3zFw, where at least one of M1, M2, or M3 is nickel. The metal fluoride coating can be formed directly on a substrate or on a coating of a substrate.

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.

Abstract: Implementations described herein protect a substrate support from corrosive cleaning gases used at high temperatures. In one embodiment, a substrate support has a shaft having an outer wall. The substrate support has a heater. The heater has a body having a top surface, a side surface and a bottom surface extending from the outer wall of the shaft. The top surface is configured to support a substrate during plasma processing of the substrate. A covering is provided for at least two of the top surface, side surface and bottom surface. The covering is selected to resist corrosion of the body at temperatures in excess of about 400 degrees Celsius. A sleeve circumscribing the shaft, the sleeve and the outer wall of the shaft forming a space therebetween, the space adapted to flow a purge gas therethrough in a direction toward the body.

Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

Abstract: A method of forming a radio frequency (RF) strap for use in a process chamber is provided. The method includes positioning a core strap including a first material that is electrically and thermally conductive in a first electrochemical bath. The first electrochemical bath includes a first solvent and a first plating precursor. The method further includes forming a first protective coating on an outer surface of the core strap, removing the first solvent and the first plating precursor from the core strap having the first protective coating formed thereon, post-treating the core strap having the first protective coating formed thereon, positioning the core strap having the first protective coating formed thereon in a second electrochemical bath, and forming a second protective coating on an outer surface of the first protective coating.

Abstract: Methods and apparatus for bonding an electrostatic chuck to a component of a substrate support are provided herein. In some embodiments, an adhesive for bonding components of a substrate support may include a matrix of silicon-based polymeric material having a filler dispersed therein. The silicon based polymeric material may be a polydimethylsiloxane (PDMS) structure having a molecular weight with a low molecular weight (LMW) content ? D3-D10 of less than about 500 ppm. In some embodiments, the filler may comprise between about 50 to about 70 percent by volume of the adhesive layer. In some embodiments, the filler may comprise particles of aluminum oxide (Al2O3), aluminum nitride (AlN), yttrium oxide (Y2O3), or combinations thereof. In some embodiments, the filler may comprise particles having a diameter of about 10 nanometers to about 10 microns.

Abstract: Certain embodiments of the present disclosure relate to ceramic materials with high thermal shock resistance and high erosion resistance. In one embodiment, a ceramic material is formed from a composition comprising Al2O3, MgO, SiO2.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a protective coating that includes at least one metal fluoride having a formula selected from the group consisting of M1xFw, M1xM2yFw and M1xM2yM3zFw, where at least one of M1, M2, or M3 is magnesium or lanthanum. The protective coating can be deposited by atomic layer deposition, chemical vapor deposition, electron beam ion assisted deposition, or physical vapor deposition.

Abstract: A method and apparatus for the use of hydrogen plasma treatments is described herein. The process chamber includes a plurality of chamber components. The plurality of chamber components may be coated with a yttrium zirconium oxide composition, such as a Y2O3—ZrO2 solid solution. Some of the plurality of chamber components are replaced with a bulk yttrium zirconium oxide ceramic. Yet other chamber components are replaced with similar components of different materials.

Abstract: A heat treated ceramic article includes a ceramic substrate and a ceramic coating on the ceramic substrate. The ceramic coating is a non-sintered ceramic coating that has a different composition than the ceramic substrate. The heat treated ceramic article further includes a transition layer between the ceramic substrate and the ceramic coating, the transition layer comprising first elements from the ceramic coating that have reacted with second elements from the ceramic substrate, wherein the transition layer has a thickness of about 0.1 microns to about 5 microns.

Abstract: Embodiments disclosed herein generally relate to a chamber liner for the high temperature processing of substrates in a processing chamber. The processing chamber utilizes an inert bottom purge flow to shield the substrate support from halogen reactants such that the substrate support may be heated to temperatures greater than about 650 degrees Celsius. The chamber liner controls a flow profile such that during deposition the bottom purge flow restricts reactants and by-products from depositing below the substrate support. During a clean process, the bottom purge flow restricts halogen reactants from contacting the substrate support. As such, the chamber liner includes a conical inner surface angled inwardly to direct purge gases around an edge of the substrate support and to reduce deposition under the substrate support and the on the edge.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.