Abstract: A semiconductor apparatus includes a heatsink plate, a substrate disposed on the heatsink plate, a circuit pattern disposed on the substrate, a semiconductor chip disposed on the circuit pattern, a case fixed to the heatsink plate and surrounding an outer perimeter of the substrate, a terminal attached to the case, and a wire configured to electrically connect the terminal to the circuit pattern or to the semiconductor chip. In a plan view as viewed in the thickness direction of the heatsink plate, a portion of the circuit pattern overlaps the terminal.

Abstract: The present disclosure relates to an image sensor and an electronic device capable of further improving performance. An image sensor includes: a photoelectric conversion unit provided for each of a plurality of pixels arranged in a matrix on a sensor surface; a TG transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an FD node; and a TGD transistor that transfers a charge generated by photoelectric conversion in the photoelectric conversion unit to an SN node. In addition, at least a part of a predetermined number of the pixels included in an intensity sharing unit that shares and uses the FD node and a predetermined number of the pixels included in an event sharing unit that shares and uses the SN node have different sharing destinations. The present technology can be applied to, for example, an image sensor that detects occurrence of an event and acquires an image.

Abstract: Suppressing a dead period at the time of mode switching. A solid-state imaging device includes: a plurality of pixels (300) that each outputs a luminance change of incident light; and a detection circuit (305) that outputs an event signal based on the luminance change output from each of the pixels, in which each of the pixels includes: a photoelectric conversion element (311) that generates a charge according to an incident light amount; a logarithmic conversion circuit (312, 313) that is connected to the photoelectric conversion element and converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent; and a first transistor (318) having a drain connected to a sense node of the logarithmic conversion circuit.