Abstract: A method for manufacturing a semiconductor device includes forming a metal-including layer over a semiconductor substrate; forming a hydrophobic polymer layer over the metal-including layer; and forming an amphiphilic polymer layer between the metal-including layer and the hydrophobic polymer layer so as to enhance a bonding force therebetween.

Abstract: A method of forming a semiconductor device includes forming an epitaxial source/drain (S/D) structure adjacent to a gate structure; forming a dielectric structure over the gate and epitaxial S/D structures; forming a trench in the dielectric structure to accessibly expose a portion of the epitaxial S/D structure; forming a contact feature from the portion of the epitaxial S/D structure within the trench; and forming a S/D contact in the trench to be in contact with the contact feature overlying the epitaxial S/D structure. Forming the contact feature includes forming a metallic layer in the trench; performing a thermal process on the metallic layer to form the contact feature, where after the thermal process, metallic residues remain on a sidewall of a spacer of the dielectric structure in the trench; and removing the metallic residues by using a wet etching process, wherein the spacer of the dielectric structure remains substantially intact.

Abstract: An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid and an alkaline solution, a rate of etching a cobalt-containing member by the etchant is greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is less than or equal to 100 ppb. A semiconductor structure, includes a plurality of epitaxial structures over a substrate, a gate structure over the substrate and between two of the plurality of epitaxial structures; a cobalt-containing member over one of the epitaxial structures and adjacent to the gate structure; and a dielectric member over the cobalt-containing member, wherein a top surface of the cobalt-containing member is formed by etching a portion of the cobalt-containing member using an etchant including a fluorine-free acid and an alkaline solution.

Abstract: A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

Abstract: A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb.

Abstract: An electronic load simulates an LED is to output a simulation signal after receiving an input signal. The simulation signal has a voltage value and a current value approximating to a characteristic curve of a real LED. The electronic load comprises a processor, an amplifier, and a control unit. The processor receives a control command to set up the LED. The control command includes a forward voltage parameter and an equivalent impedance parameter. The control unit generates an adjustment command according to the foregoing parameters and the voltage of the power source. The amplifier receives and further adjusts the adjustment command so as to output the simulation signal.