Abstract: A semiconductor device includes a bidirectional switching circuit including a substrate, a first switching element, a second switching element, a first rectifying element, and a second rectifying element. The substrate includes a first circuit pattern electrically connected to a gate electrode of the first switching element, a second circuit pattern electrically connected to a gate electrode of the second switching element, a third circuit pattern electrically connected to a negative electrode of the first switching element, and a fourth circuit pattern electrically connected to a negative electrode of the second switching element. When viewed from the first direction, the third circuit pattern is arranged adjacently to the first circuit pattern and the fourth circuit pattern is arranged adjacently to the second circuit pattern.

Abstract: A first electrode includes an elongated first contact surface. A second electrode includes the second contact surface provided to face the first contact surface and extend in parallel to the first contact surface. An insulating material is provided between the first electrode and the second electrode. The insulating material extends between the first contact surface and the second contact surface, and has contact with the first contact surface and the second contact surface. The first electrode includes a first corner part located in an end portion of the first contact surface in a width direction. The second electrode includes a second corner part located in an end portion of the second contact surface in a width direction. Each of the first corner part and the second corner part includes any one of a chamfered part and a burr part.

Abstract: A semiconductor power module in which a three-phase AC inverter is incorporated in a package includes first to third circuit patterns on which second, fourth, and sixth switching elements are mounted, respectively, and a fourth circuit pattern on which first, third, and fifth switching elements are mounted; a second main electrode to which all of main electrode wirings of the second, fourth, and sixth switching elements are connected; a second main electrode terminal connected to the second main electrode; a first main electrode electrically connected to the fourth circuit pattern; and a first main electrode terminal connected to the first main electrode, and each of the main electrode wirings of the second, fourth, and sixth switching elements is provided so that a main electrode wiring closer to the second main electrode terminal in a horizontal direction in plan view has a longer length.

Abstract: The technique disclosed in the present specification is a technique for effectively reducing resistance even when the electrode shape has irregularities. A technique disclosed in the present specification is a semiconductor device includes a semiconductor chip, a case that houses the semiconductor chip therein, a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to outside from the case, and a conductive material applied to a front surface of the main electrode exposed from the case, in which the front surface of the main electrode is the surface connected to a bus bar.

Abstract: A semiconductor power module in which a three-phase AC inverter is incorporated in a package includes first to third circuit patterns on which second, fourth, and sixth switching elements are mounted, respectively, and a fourth circuit pattern on which first, third, and fifth switching elements are mounted; a second main electrode to which all of main electrode wirings of the second, fourth, and sixth switching elements are connected; a second main electrode terminal connected to the second main electrode; a first main electrode electrically connected to the fourth circuit pattern; and a first main electrode terminal connected to the first main electrode, and each of the main electrode wirings of the second, fourth, and sixth switching elements is provided so that a main electrode wiring closer to the second main electrode terminal in a horizontal direction in plan view has a longer length.