Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.

Abstract: A capacitor device includes a plurality of capacitors arranged into a shape. Each capacitor of the plurality of capacitors has a first external electrode on a first side of the capacitor and a second external electrode on a second side of the capacitor opposing the first side. A first plate is proximate and electrically coupled to the first external electrodes of the capacitors. A second plate is proximate and electrically coupled to the second external electrodes of the capacitors.

Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A capacitor device includes a plurality of capacitors arranged into a shape. Each capacitor of the plurality of capacitors has a first external electrode on a first side of the capacitor and a second external electrode on a second side of the capacitor opposing the first side. A first plate is proximate and electrically coupled to the first external electrodes of the capacitors. A second plate is proximate and electrically coupled to the second external electrodes of the capacitors.

Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.

Abstract: A capacitor device includes a plurality of capacitors arranged into a shape. Each capacitor of the plurality of capacitors has a first external electrode on a first side of the capacitor and a second external electrode on a second side of the capacitor opposing the first side. A first plate is proximate and electrically coupled to the first external electrodes of the capacitors. A second plate is proximate and electrically coupled to the second external electrodes of the capacitors.

Abstract: A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.

Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A transient electronic device includes electronic elements (e.g., an SOI- or chip-based IC) and a trigger mechanism disposed on a frangible glass substrate. The trigger mechanism includes a switch that initiates a large trigger current through a self-limiting resistive element in response to a received trigger signal. The self-limiting resistive element includes a resistor portion that generates heat in response to the trigger current, thereby rapidly increasing the temperature of a localized (small) region of the frangible glass substrate, and a current limiting portion (e.g., a fuse) that self-limits (terminates) the trigger current after a predetermined amount of time, causing the localized region to rapidly cool down.

Abstract: A self-destructing device includes a stressed substrate with a heater thermally coupled to the stressed substrate. The device includes a power source and trigger circuitry comprising a sensor and a switch. The sensor generates a trigger signal when exposed to a trigger stimulus. The switch couples the power source to the heater in response to the trigger signal When energized by the power source, the heater generates heat sufficient to initiate self-destruction of the stressed substrate.

Abstract: A capacitor device includes a plurality of capacitors arranged into a shape. Each capacitor of the plurality of capacitors has a first external electrode on a first side of the capacitor and a second external electrode on a second side of the capacitor opposing the first side. A first plate is proximate and electrically coupled to the first external electrodes of the capacitors. A second plate is proximate and electrically coupled to the second external electrodes of the capacitors.

Abstract: An IC assembly includes multiple microelectronic dies embedded in a substrate material using capillary forces such that the contact surface of each microelectronic die is coplanar with a planar upper surface of the substrate material. The substrate material is deposited as a layer of uncured polymer in a paste (or other solid form) on a base chip, and then the microelectronic dies are mounted on the layer surface in a predefined pattern. The uncured polymer is then heated until becomes a flowable liquid, causing the microelectronic dies to be pulled into the liquid polymer by capillary forces until the contact surface of each microelectronic die is coplanar with the upper liquid polymer surface. The liquid polymer is then cured to form the substrate material as a cross-linked robust solid film that fixedly secures the microelectronic dies in the predefined pattern. The microelectronic dies are then interconnected using standard metallization techniques.

Abstract: Charge-encoded chiplets are produced using a sacrificial metal mask and associated fabrication techniques and materials that are compatible with typical semiconductor fabrication processes to provide each chiplet with two different (i.e., positive and negative) charge polarity regions generated by associated patterned charge-inducing material structures. A first charge-inducing material having a positive charge polarity is formed on a silicon wafer over previously-fabricated integrated circuits, then a sacrificial metal mask is patterned only over a portion of the charge-inducing material structure, and a second charge-inducing material structure (e.g., a self-assembling octadecyltrichlorosilane monolayer) is deposited having a negative charge polarity. The sacrificial metal mask is then removed to expose the masked portion of the first charge-inducing material structure, thereby providing the chiplet with both a positive charge polarity region and a negative charge polarity region.

Abstract: A ultra-violet sensor has a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor. A memory device has an array of ultra-violet sensors, each sensor having a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor, an array of ultra-violet light sources corresponding to the array of ultra-violet sensors, an array of detectors electrically coupled to the array of ultra-violet sensors, driving circuitry attached to the array of sensors and the ultra-violet light sources to allow addressing of the arrays, and a reset mechanism.

Abstract: Charge-encoded chiplets are produced using a sacrificial metal mask and associated fabrication techniques and materials that are compatible with typical semiconductor fabrication processes to provide each chiplet with two different (i.e., positive and negative) charge polarity regions generated by associated patterned charge-inducing material structures. A first charge-inducing material (e.g., SiO2) having a first (e.g., positive) charge polarity is formed on a silicon wafer over previously-fabricated integrated circuits (ICs), then a sacrificial metal mask (e.g., MoCr) is patterned only over a portion of the charge-inducing material structure, and a second charge-inducing material structure (e.g., a self-assembling octadecyltrichlorosilane (OTS) monolayer) is deposited having a second (e.g., negative) charge polarity.

Abstract: An IC assembly includes multiple microelectronic dies embedded in a substrate material using capillary forces such that the contact surface of each microelectronic die is coplanar with a planar upper surface of the substrate material. The substrate material is deposited as a layer of uncured polymer in a paste (or other solid form) on a base chip, and then the microelectronic dies are mounted on the layer surface in a predefined pattern. The uncured polymer is then heated until becomes a flowable liquid, causing the microelectronic dies to be pulled into the liquid polymer by capillary forces until the contact surface of each microelectronic die is coplanar with the upper liquid polymer surface. The liquid polymer is then cured to form the substrate material as a cross-linked robust solid film that fixedly secures the microelectronic dies in the predefined pattern. The microelectronic dies are then interconnected using standard metallization techniques.

Abstract: A ultra-violet sensor has a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor. A memory device has an array of ultra-violet sensors, each sensor having a gate on a substrate, a dielectric formed over the gate and the substrate, an oxide semiconductor formed over the dielectric, and a source electrode and a drain electrode formed at the edges of the oxide semiconductor, an array of ultra-violet light sources corresponding to the array of ultra-violet sensors, an array of detectors electrically coupled to the array of ultra-violet sensors, driving circuitry attached to the array of sensors and the ultra-violet light sources to allow addressing of the arrays, and a reset mechanism.